NTMFS4841N Power MOSFET 30 V, 57 A, Single NChannel, SO8 FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4841N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 3 JC JunctiontoAmbient Steady State (Note 1) R 57.7 JA C/W JunctiontoAmbient Steady State (Note 2) R 143.4 JA JunctiontoAmbient t = 10 sec R 25 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V to I = 30 A 4.7 7.0 DS(on) GS D 11.5 V I = 15 A 4.6 D m V = 4.5 V I = 30 A 9.2 11.4 GS D I = 15 A 8.5 D Forward Transconductance g V = 15 V, I = 15 A 16 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1436 ISS Output Capacitance C 348 OSS V = 0 V, f = 1 MHz, V = 12 V pF GS DS Reverse Transfer Capacitance C 177 RSS Total Gate Charge Q 11.5 17 G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 5.0 GS GatetoDrain Charge Q 5.1 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 25.4 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 13.5 d(ON) Rise Time t 66.5 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G Turn Off Delay Time t 15.5 d(OFF) Fall Time t 7.5 f 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.