NTMFS4C028N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX Optimized Gate Charge to Minimize Switching Losses (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4.73 m 10 V 30 V 52 A Compliant 7.0 m 4.5 V Applications D (58) CPU Power Delivery DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS S (1,2,3) T = 25C 16.4 Continuous Drain I A A D NCHANNEL MOSFET Current R JA T = 80C 12.3 (Note 1) A MARKING Power Dissipation T = 25C P 2.51 W A D DIAGRAMS R (Note 1) JA D Continuous Drain T = 25C I 25.3 A A D S D Current R 10 s SO8 FLAT LEAD JA S 4C028 T = 80C 19.0 A (Note 1) CASE 488AA AYWZZ S STYLE 1 Power Dissipation T = 25C P 6.0 W A D G D R 10 s (Note 1) 1 JA Steady D State Continuous Drain T = 25C I 9.0 A A D A = Assembly Location Current R JA T = 80C 6.8 A (Note 2) Y = Year W = Work Week Power Dissipation T = 25C P 0.76 W A D ZZ = Lot Traceabililty R (Note 2) JA Continuous Drain T = 25C I 52 A C D Current R JC ORDERING INFORMATION T =80C 39 C (Note 1) Power Dissipation T = 25C P 25.5 W C D Device Package Shipping R (Note 1) JC NTMFS4C028NT1G SO8 FL 1500 / Pulsed Drain T = 25C, t = 10 s I 146 A DM A p (PbFree) Tape & Reel Current NTMFS4C028NT3G SO8 FL 5000 / Current Limited by Package T = 25C I 80 A A Dmax (PbFree) Tape & Reel Operating Junction and Storage T , 55 to C J Temperature T +150 STG For information on tape and reel specifications, including part orientation and tape sizes, please Source Current (Body Diode) I 23 A S refer to our Tape and Reel Packaging Specifications Drain to Source dV/dt dV/d 7.0 V/ns t Brochure, BRD8011/D. Single Pulse DraintoSource Avalanche E 42 mJ AS Energy (T = 25C, V = 10 V, I = 29 A , J GS L pk L = 0.1 mH, R = 25 ) (Note 3) GS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 1 NTMFS4C028N/DNTMFS4C028N 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at T = 25C, V = 10 V, I = 20 A , EAS = 20 mJ. J GS L pk THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.9 JC JunctiontoAmbient Steady State (Note 4) R 49.8 JA C/W JunctiontoAmbient Steady State (Note 5) 164.6 R JA JunctiontoAmbient (t 10 s) (Note 4) R 21.0 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 8.4 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.9 4.73 DS(on) GS D m V = 4.5 V I = 18 A 5.8 7.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 50 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1252 ISS Output Capacitance C 610 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 126 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.101 RSS ISS GS DS Total Gate Charge Q 10.9 G(TOT) Threshold Gate Charge Q 1.9 G(TH) nC GatetoSource Charge Q 3.4 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 5.4 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 22.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2