MOSFET Power, Single N-Channel 40 V, 0.67 m , 420 A NTMTS0D7N04C Features Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Power 88 Package, Industry Standard V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 40 V 420 A 0.67 m 10 V Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (58) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 420 A D C G (1) Current R JC T = 100C 297 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 205 W C D S (24) R (Note 1) JC T = 100C 103 C NCHANNEL MOSFET Continuous Drain T = 25C I 65 A A D Current R JA T = 100C 46 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 4.9 W D A R (Notes 1, 2) JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM DFNW8 Operating Junction and Storage Temperature T , T 55 to C J stg TX SUFFIX Range +175 CASE 507AP Source Current (Body Diode) I 171 A S Single Pulse DraintoSource Avalanche E 1446 mJ AS MARKING DIAGRAM Energy (I = 40 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the XXXXXXXX device. If any of these limits are exceeded, device functionality should not be AWLYWW assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit XXX = Device Code JunctiontoCase Steady State R 0.73 C/W (8 AN characters max) JC A = Assembly Location JunctiontoAmbient Steady State (Note 2) R 30.4 JA WL = 2digit Wafer Lot Code 1. The entire application environment impacts the thermal resistance values shown, Y = Year Code they are not constants and are only valid for the particular conditions noted. WW = Work Week Code 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2020 Rev. 6 NTMTS0D7N04C/DNTMTS0D7N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 20 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.57 0.67 m DS(on) GS D Forward Transconductance g V =5 V, I = 50 A 200 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 9230 ISS Output Capacitance C 4730 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 126 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 140 G(TOT) GS DS D Threshold Gate Charge Q 22.7 G(TH) nC GatetoSource Charge Q 37 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 28.3 GD Plateau Voltage V 4.28 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 28.9 d(ON) Rise Time t 18.1 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 61.0 d(OFF) Fall Time t 20.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.77 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.65 J Reverse Recovery Time t 83 RR Charge Time t 58 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 25 b Reverse Recovery Charge Q 191 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2