Product Information

NTP110N65S3HF

NTP110N65S3HF electronic component of ON Semiconductor

Datasheet
MOSFET SUPERFET3 650V FRFET110M

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.3423 ea
Line Total: USD 6.3423

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 800
Multiples : 1

Stock Image

NTP110N65S3HF
ON Semiconductor

800 : USD 3.6587
1000 : USD 3.5075

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 800
Multiples : 1

Stock Image

NTP110N65S3HF
ON Semiconductor

800 : USD 3.6587
1000 : USD 3.5075

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 800
Multiples : 800

Stock Image

NTP110N65S3HF
ON Semiconductor

800 : USD 4.0586

0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

NTP110N65S3HF
ON Semiconductor

1 : USD 6.0835
10 : USD 5.2095
50 : USD 4.554
100 : USD 4.2205
250 : USD 3.8755
500 : USD 3.7375
800 : USD 3.5075
2400 : USD 3.496
5600 : USD 3.358

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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NTP110N65S3HF MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high V R MAX I MAX DSS DS(ON) D voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate 650 V 110 m 10 V 30 A charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and D withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and G improve system reliability. Features S 700 V T = 150C J POWER MOSFET Typ. R = 98 m DS(on) Ultra Low Gate Charge (Typ. Q = 62 nC) g Low Effective Output Capacitance (Typ. C = 522 pF) oss(eff.) 100% Avalanche Tested G These Devices are PbFree and are RoHS Compliant D S Applications TO220 CASE 340AT Telecom / Server Power Supplies Industrial Power Supplies MARKING DIAGRAM EV Charger UPS / Solar Y&Z&3&K NTP110 N65S3HF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTP110N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June,2019 Rev. 0 NTP110N65S3HF/DNTP110N65S3HF ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 30 A D C Continuous (T = 100C) 19.5 C I Drain Current Pulsed (Note 1) 69 A DM E Single Pulsed Avalanche Energy (Note 2) 380 mJ AS I Avalanche Current (Note 2) 4.4 A AS E Repetitive Avalanche Energy (Note 1) 2.4 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 240 W D C Derate Above 25C 1.92 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 4.4 A, R = 25 , starting T = 25C. AS G J 3. I 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.52 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTP110N65S3HF NTP110N65S3HF TO220 Tube N/A N/A 50 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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