NTST20100CTG, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Trench-based Dual Schottky www.onsemi.com Rectifier, Very Low Forward PIN CONNECTIONS Voltage, 20A, 100V 1 2, 4 Features 3 Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage 4 Fast Switching with Exceptional Temperature Stability 4 Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability TO220AB I2PAK These are PbFree Devices CASE 221A CASE 418D 1 1 2 2 STYLE 6 STYLE 3 3 Typical Applications 3 Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display 4 High Frequency and DCDC Converters Freewheeling and ORing diodes Reverse Battery Protection Instrumentation TO220FP D2PAK Mechanical Characteristics CASE 221AH CASE 418B 1 Case: Epoxy, Molded 2 3 Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ORDERING INFORMATION See detailed ordering and shipping information in the package Lead Temperature for Soldering Purposes: 260C Maximum for dimensions section on page 5 of this data sheet. 10 sec Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 7 NTST20100CT/DNTST20100CTG, NTSB20100CT1G, NTSJ20100CTG, NTSB20100CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 130C) Per device 20 R C Per diode 10 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 125C) Per device 40 R C Per diode 20 Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST20100CTG, Rating Symbol NTSB20100CT1G NTSB20100CTG NTSJ20100CTG Unit Maximum Thermal Resistance per Diode JunctiontoCase R 2.5 1.5 4.49 C/W JC JunctiontoAmbient 70 46.9 105 C/W R JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.55 F J (I = 10 A, T = 25C) 0.65 0.83 F J (I = 5 A, T = 125C) 0.50 F J (I = 10 A, T = 125C) 0.58 0.68 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 17 A R J (V = 70 V, T = 125C) 5.3 mA R J (Rated dc Voltage, T = 25C) 800 A J (Rated dc Voltage, T = 125C) 12 25 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2