NTTFS4C08N MOSFET Power, Single, N-Channel, 8FL 30 V, 52 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D Optimized Gate Charge to Minimize Switching Losses 5.9 m 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 30 V 52 A Compliant 9.0 m 4.5 V Applications NChannel MOSFET DCDC Converters Power Load Switch D (58) Notebook Battery Management MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain I A T = 25C 15 A D Current R (Note 1) JA T = 85C 10.8 A MARKING DIAGRAM Power Dissipation R T = 25C P 2.13 W JA A D 1 (Note 1) 1 S D Continuous Drain I A 4C08 T = 25C 21 WDFN8 S D A D Current R 10 s AYWW JA ( 8FL) S D T = 85C 15 (Note 1) A G D CASE 511AB Power Dissipation T = 25C P 4.2 W A D R 10 s (Note 1) Steady JA 4C08 = Specific Device Code State Continuous Drain T = 25C I 9.3 A D A = Assembly Location A Current R (Note 2) JA Y = Year T = 85C 6.7 A WW = Work Week Power Dissipation T = 25C P 0.82 W A D = PbFree Package R (Note 2) JA (Note: Microdot may be in either location) Continuous Drain T = 25C I 52 A D C Current R (Note 1) JC T = 85C 37.5 C Power Dissipation T = 25C P 25.5 W ORDERING INFORMATION C D R (Note 1) JC Device Package Shipping Pulsed Drain Current T = 25C, t = 10 s I 144 A A p DM NTTFS4C08NTAG WDFN8 1500 / Tape & Operating Junction and Storage Temperature T , 55 to C J (PbFree) Reel T +150 stg For information on tape and reel specifications, Source Current (Body Diode) I 23 A S including part orientation and tape sizes, please Drain to Source dV/dt dV/dt 6.0 V/ns refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Single Pulse DraintoSource Avalanche Energy E 42 mJ AS (T = 25C, V = 10 V, I = 29 A , L = 0.1 mH, J GS L pk R = 25 ) (Note 3) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 3 NTTFS4C08N/DNTTFS4C08N 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 21 A, E = 22 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.9 JC JunctiontoAmbient Steady State (Note 4) R 58.8 JA C/W JunctiontoAmbient Steady State (Note 5) R 153 JA JunctiontoAmbient (t 10 s) (Note 4) R 30 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 12.6 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.7 5.9 DS(on) GS D m V = 4.5 V I = 18 A 7.2 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1113 ISS Output Capacitance C 702 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 39 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.035 RSS ISS GS DS Total Gate Charge Q 8.4 15 G(TOT) Threshold Gate Charge Q 1.8 3.5 G(TH) nC GatetoSource Charge Q 3.5 7.0 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.3 6.0 GD Gate Plateau Voltage V 3.4 7.0 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.2 35 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2