MOSFET - Power, Single N-Channel 80 V, 20 m , 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 20 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J 80 V 30 A 26 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS NChannel GatetoSource Voltage V 20 V GS D (5 8) Continuous Drain T = 25C I 30 A C D Current R JC T = 100C 21 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 42 W C D G (4) R (Notes 1, 2, 3) JC T = 100C 21 C Continuous Drain T = 25C I 8.1 A S (1, 2, 3) A D Current R JA T = 100C 5.7 (Notes 1, 3, 4) A Steady State MARKING DIAGRAM Power Dissipation T = 25C P 3.1 W A D R (Notes 1, 3) JA 1 T = 100C 1.6 A 1 S D Pulsed Drain Current T = 25C, t = 10 s I 122 A XXXX A p DM WDFN8 S D AYWW ( 8FL) S D Operating Junction and Storage Temperature T , T 55 to C J stg CASE 511AB G D Range +175 Source Current (Body Diode) I 35 A S XXXX = Specific Device Code Single Pulse DraintoSource Avalanche E 121 mJ AS A = Assembly Location Energy (I = 1.5 A) L(pk) Y = Year WW = Work Week Lead Temperature for Soldering Purposes T 260 C L = PbFree Package (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) See detailed ordering, marking and shipping information in the Parameter Symbol Value Unit package dimensions section on page 5 of this data sheet. JunctiontoCase Steady State (Note 3) R 3.6 C/W JC JunctiontoAmbient Steady State (Note 3) 48 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: March, 2020 Rev. 0 NTTFS6H860NL/DNTTFS6H860NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 80 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 30 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 5 A 16.5 20 m DS(on) GS D V = 4.5 V I = 5 A 20.5 26 m GS D Forward Transconductance g V = 8 V, I = 15 A 45 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 610 ISS Output Capacitance C 83 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 5 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 15 A 12 G(TOT) GS DS D Threshold Gate Charge Q 1 G(TH) nC GatetoSource Charge Q 2 GS GatetoDrain Charge Q 2 V = 4.5 V, V = 40 V I = 15A GD GS DS D Plateau Voltage V 3 V GP Total Gate Charge Q 6 nC G(TOT) SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 8 d(ON) Rise Time t 32 r V = 4.5 V, V = 64 V, GS DS ns I = 15 A, R = 2.5 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.80 1.2 SD J V = 0 V, GS V I = 5 A S T = 125C 0.66 J Reverse Recovery Time t 29 RR Charge Time t 18 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 15 A S Discharge Time t 11 b Reverse Recovery Charge Q 21 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2