Product Information

NUF8001MUT2G

NUF8001MUT2G electronic component of ON Semiconductor

Datasheet
ON Semiconductor EMI Network Filter Arrays 8 CH EMI FILTER

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7445 ea
Line Total: USD 0.74

5422 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
281 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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NUF8001MUT2G
ON Semiconductor

1 : USD 0.6417
10 : USD 0.4646
100 : USD 0.4128
500 : USD 0.376
1000 : USD 0.3577
3000 : USD 0.3301
6000 : USD 0.3139
9000 : USD 0.3139
24000 : USD 0.3093

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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NUF8001MU EMI Filter, 8-Channel, with Integrated ESD Protection The NUF8001MU is a eightchannel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 12 pF deliver a cutoff frequency of 160 MHz and NUF8001MU 12 3 4 5 6 7 8 GND PAD 16 15 14 13 12 11 10 9 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 16 Filter + ESD Channel 1 Filter 2 2 & 15 Filter + ESD Channel 2 Filter 3 3 & 14 Filter + ESD Channel 3 Filter 4 4 & 13 Filter + ESD Channel 4 Filter 5 5 & 12 Filter + ESD Channel 5 Filter 6 6 & 11 Filter + ESD Channel 6 Filter 7 7 & 10 Filter + ESD Channel 7 Filter 8 8 & 9 Filter + ESD Channel 8 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 V kV PP Contact Discharge 12 Machine Model 1.6 Human Body Model 16 Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 20 mA 85 100 115 A R Diode Capacitance C 10 12 15 pF d Line Capacitance C 20 24 30 pF L 3 dB CutOff Frequency (Note 1) f Above this frequency, 160 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 270 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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