NUP45V6P5 ESD Protection Diode Array, Quad, Low Capacitance This integrated surge protection is designed for applications requiring transient overvoltage protection. It is intended to be used in sensitive equipment such as wireless headsets, PDAs, digital cameras, www.onsemi.com computers, printers, communication systems, and other applications. The integrated design provides very effective and reliable protection for four separate lines using only one package. This device is ideal for 1 5 situations where board space is at a premium. Features 2 ESD Protection: IEC6100042: Level 4 3 4 Four Separate Unidirectional Configurations for Protection Low Leakage Current < 1 A 3 V Small SOT953 SMT Package Low Capacitance These are PbFree Devices Benefits SOT953 Provides Protection for ESD Industry Standards: IEC 61000, HBM CASE 526AE Protects Four Lines Against Transient Voltage Conditions Minimize Power Consumption of the System MARKING DIAGRAM Minimize PCB Board Space Typical Applications 5 M Cellular and Portable Electronics 1 Serial and Parallel Ports 5 = Specific Device Code Microprocessor Based Equipment M = Date & Assembly Code Notebooks, Desktops, Servers ORDERING INFORMATION Device Package Shipping NUP45V6P5T5G SOT953 8000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: October, 2017 Rev. 4 NUP45V6P5/DNUP45V6P5 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Thermal Resistance JunctiontoAmbient R 560 C/W JA Above 25C, Derate 4.5 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J stg Lead Solder Temperature (10 seconds duration) T 260 C L Human Body Model (HBM) ESD 8000 V Machine Model (MM) 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Capacitance Typ Capacitance V (V) C Breakdown Voltage Leakage Current 0 V Bias (pF) 3 V Bias (pF) I = 1 A PP V 1 mA (Volts) I V (Note 1) (Note 1) (Note 2) BR RM RM Device Marking Min Nom Max V I ( A) Typ Max Typ Max Max Device RWM RWM NUP45V6P5 5 5.3 5.6 5.9 3.0 1.0 13 17 7.0 11.5 10.5 1. Capacitance of one diode at f = 1 MHz, T = 25C. A 2. Surge current waveform per Figure 3. www.onsemi.com 2