NUP5120X6 ESD Protection Diode Array, 5-Line This 5line surge protection array is designed for application requiring surge protection capability. It is intended for use in overtransient voltage and ESD sensitive equipment such as cell www.onsemi.com www.onsemi.com phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single SOT563 package. SOT563 5LINE SURGE PROTECTION Features Protects up to 5 Lines in a Single SOT563 Package PIN ASSIGNMENT ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model. 1 6 Compliance with IEC 6100042 (ESD) 15 kV (Air), 8 kV (Contact) This is a PbFree Device 2 5 Applications 3 4 Hand Held Portable Applications PIN 1. CATHODE Serial and Parallel Ports 2. ANODE Notebooks, Desktops, Servers 3. CATHODE 4. CATHODE 5. CATHODE MAXIMUM RATINGS (T = 25C, unless otherwise specified) 6. CATHODE J Symbol Rating Value Unit MARKING P 1 Peak Power Dissipation 90 W 4 PK 5 DIAGRAM 6 8x20 sec double exponential waveform, (Note 1) SOT563 3 2 RN M 1 CASE 463A T Operating Junction Temperature Range 40 to 125 C J SCALE 4:1 STYLE 6 T Storage Temperature Range 55 to 150 C STG RN = Specific Device Code T Lead Solder Temperature Maximum 260 C L M = Month Code (10 seconds) = PbFree Package ESD Human Body Model (HBM) 16000 V (Note: Microdot may be in either location) Machine Model (MM) 400 IEC 6100042 Air (ESD) 15000 IEC 6100042 Contact (ESD) 8000 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. NUP5120X6T1G SOT563 4000/Tape & Reel 1. Nonrepetitive current pulse per Figure 1. (PbFree) NUP5120X6T2G SOT563 4000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: November, 2017 Rev. 5 NUP5120/DNUP5120X6 ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) V 5.0 V RWM Breakdown Voltage I = 1 mA, (Note 3) V 6.2 6.8 7.2 V T BR Reverse Leakage Current V = 3 V I 0.01 0.5 A RWM R Capacitance V = 0 V, f = 1 MHz (Line to GND) C 54 70 pF R J V = 2.5 V, f = 1 MHz (Line to GND) R 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T www.onsemi.com 2