NTF6P02, NVF6P02 MOSFET Power, P-Channel, SOT-223 -10 A, -20 V Features www.onsemi.com Low R DS(on) 10 AMPERES Logic Level Gate Drive 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified R = 44 m (Typ.) DS(on) NVF Prefix for Automotive and Other Applications Requiring S Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* These Devices are PbFree and are RoHS Compliant G Typical Applications Power Management in Portables and BatteryPowered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards D PChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Rating Symbol Value Unit & PIN ASSIGNMENT DraintoSource Voltage V 20 Vdc DSS Drain 4 GatetoSource Voltage V 8.0 Vdc GS 4 1 Drain Current (Note 1) 2 3 Continuous T = 25C I 10 Adc A D AYW Continuous T = 70C I 8.4 A D SOT223 F6P02 Single Pulse (t = 10 s) I 35 Apk p DM CASE 318E STYLE 3 Total Power Dissipation T = 25C P 8.3 W A D 1 2 3 Operating and Storage Temperature Range T , T 55 to C J stg Gate Drain Source +150 Single Pulse DraintoSource Avalanche E 150 mJ A = Assembly Location AS Energy Starting T = 25C J Y = Year (V = 20 Vdc, V = 5.0 Vdc, DD GS W = Work Week I = 10 A, L = 3.0 mH, R = 25 ) L(pk) G F6P02 = Specific Device Code = PbFree Package Thermal Resistance C/W Junction to Lead (Note 1) R 15 (Note: Microdot may be in either location) JL Junction to Ambient (Note 2) R 71.4 JA Junction to Ambient (Note 3) R 160 JA Maximum Lead Temperature for Soldering T 260 C L ORDERING INFORMATION Purposes, 1/8 from case for 10 seconds Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4000 / Tape & NTF6P02T3G SOT223 assumed, damage may occur and reliability may be affected. Reel (PbFree) 1. Steady State. 2. When surface mounted to an FR4 board using 1 pad size, 4000 / Tape & NVF6P02T3G* SOT223 (Cu. Area 1.127 sq in), Steady State. Reel (PbFree) 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 7 NTF6P02T3/DNTF6P02, NVF6P02 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 4) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 20 25 GS D mV/C Temperature Coefficient (Positive) 11 Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current I 100 nAdc GSS (V = 8.0 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) V Vdc GS(th) 0.4 0.7 1.0 (V = V , I = 250 Adc) DS GS D 2.6 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 4) R m DS(on) (V = 4.5 Vdc, I = 6.0 Adc) 44 50 GS D (V = 2.5 Vdc, I = 4.0 Adc) 57 70 GS D (V = 2.5 Vdc, I = 3.0 Adc) 57 GS D g 12 Mhos Forward Transconductance (Note 4) fs (V = 10 Vdc, I = 6.0 Adc) DS D DYNAMIC CHARACTERISTICS Input Capacitance (V = 16 Vdc, V = 0 V, C 900 1200 pF DS GS iss f = 1.0 MHz) Output Capacitance C 350 500 oss Transfer Capacitance C 90 150 rss Input Capacitance C 940 (V = 10 Vdc, V = 0 V, pF DS GS iss f = 1.0 MHz) Output Capacitance C 410 oss Transfer Capacitance C 110 rss SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time (V = 5.0 Vdc, I = 1.0 Adc, t 7.0 12 ns d(on) DD D V = 4.5 Vdc, GS Rise Time t 25 45 r R = 6.0 ) G TurnOff Delay Time t 75 125 d(off) Fall Time t 50 85 f TurnOn Delay Time t 8.0 (V = 16 Vdc, I = 6.0 Adc, ns DD D d(on) V = 4.5 Vdc, GS Rise Time t 30 r R = 2.5 ) G TurnOff Delay Time t 60 d(off) Fall Time t 60 f Gate Charge (V = 16 Vdc, I = 6.0 Adc, Q 15 20 nC DS D T V = 4.5 Vdc) (Note 4) GS Q 1.7 gs Q 6.0 gd SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 3.0 Adc, V = 0 Vdc) (Note 4) V 0.82 1.2 Vdc S GS SD (I = 2.1 Adc, V = 0 Vdc) 0.74 S GS (I = 3.0 Adc, V = 0 Vdc, T = 125C) 0.68 S GS J t 42 Reverse Recovery Time (I = 3.0 Adc, V = 0 Vdc, ns S GS rr dI /dt = 100 A/ s) (Note 4) S t 17 a t 25 b Reverse Recovery Stored Charge Q 0.036 C RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2