NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A NTJS4405N, NVJS4405N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 30 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 20 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.65 1.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 0.6 A 249 350 DS(on) GS D m V = 2.7 V, I = 0.2 A 299 400 GS D V = 4.5 V, I = 1.2 A 260 GS D Forward Transconductance g V = 5.0 V, I = 0.5 A 0.5 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 49 60 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 22.4 30 OSS V = 10 V DS Reverse Transfer Capacitance C 8.0 12 RSS Total Gate Charge Q 0.75 1.5 nC G(TOT) Threshold Gate Charge Q 0.10 G(TH) V = 4.5 V, V = 5.0 V, GS DS I = 0.95 A D GatetoSource Charge Q 0.30 0.50 GS GatetoDrain Charge Q 0.20 0.40 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 6.0 12 ns d(ON) Rise Time t 4.7 8.0 r V = 4.5 V, V = 6.0 V, GS DS I = 0.5 A, R = 50 D G TurnOff Delay Time t 25 35 d(OFF) Fall Time t 41 60 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.82 1.20 V SD GS J I = 0.6 A S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.