X-On Electronics has gained recognition as a prominent supplier of NVMFD5C446NLWFT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFD5C446NLWFT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFD5C446NLWFT1G ON Semiconductor

NVMFD5C446NLWFT1G electronic component of ON Semiconductor
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Part No.NVMFD5C446NLWFT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 40V LL S08FL DS
Datasheet: NVMFD5C446NLWFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.8801 ea
Line Total: USD 7.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 7.8801
10 : USD 2.7781
100 : USD 2.2331
500 : USD 1.8378
1500 : USD 1.6561

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMFD5C446NLWFT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFD5C446NLWFT1G and other electronic components in the MOSFETs category and beyond.

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NVMFD5C446NL MOSFET Power, Dual N-Channel 40 V, 2.65 m , 145 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFD5C446NLWF Wettable Flank Option for Enhanced Optical 2.65 m 10 V Inspection 40 V 145 A 3.9 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Dual NChannel MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 D2 Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G1 G2 Continuous Drain T = 25C I 145 A C D Current R JC T = 100C 105 (Notes 1, 2, 3) C Steady S1 S2 State Power Dissipation T = 25C P 125 W D C R (Notes 1, 2) JC T = 100C 62 C MARKING Continuous Drain T = 25C I 25 A A D Current R DIAGRAM JA T = 100C 18 (Notes 1, 2, 3) A Steady D1 D1 State Power Dissipation T = 25C P 3.5 W S1 D1 A D 1 R (Notes 1 & 2) G1 D1 JA XXXXXX T = 100C 1.8 DFN8 5x6 A S2 AYWZZ D2 (SO8FL) Pulsed Drain Current T = 25C, t = 10 s I 644 A A p DM G2 D2 CASE 506BT D2 D2 Operating Junction and Storage Temperature T , T 55 to C J stg + 175 A = Assembly Location Source Current (Body Diode) I 91 A S Y = Year W = Work Week Single Pulse DraintoSource Avalanche E 171 mJ AS ZZ = Lot Traceability Energy (T = 25C, I = 11 A) J L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information in the assumed, damage may occur and reliability may be affected. package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 1.38 JC JunctiontoAmbient Steady State (Note 2) R 46.9 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July. 2019 Rev. 0 NVMFD5C446NL/DNVMFD5C446NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 23 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 90 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 2.2 2.65 DS(on) GS D m V = 4.5 V I = 20 A 3.0 3.9 GS D Forward Transconductance g V = 15 V, I = 50 A 138 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3170 ISS Output Capacitance C 1270 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 48 RSS Total Gate Charge Q V = 4.5 V, V = 32 V I = 50 A 25 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 32 V I = 50 A 54 G(TOT) GS DS D Threshold Gate Charge Q 5.7 nC G(TH) GatetoSource Charge Q 10.7 GS V = 4.5 V, V = 32 V I = 50 A GS DS D GatetoDrain Charge Q 7.0 GD Plateau Voltage V 5.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 14.8 d(ON) Rise Time t 16.8 r V = 4.5 V, V = 32 V, GS DS ns I = 5 A, R = 1.0 D G TurnOff Delay Time t 34.9 d(OFF) Fall Time t 15.2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.7 J Reverse Recovery Time t 54 RR Charge Time t 24 ns a V = 0 V, dIS/dt = 50 A/ s, GS I = 5 A S Discharge Time t 30 b Reverse Recovery Charge Q 55 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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