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NVMFD6H840NL Power MOSFET 80 V, 6.9 m , 74 A, Dual NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFD6H840NLWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 6.9 m 10 V These Devices are PbFree and are RoHS Compliant 80 V 74 A 8.8 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit Dual NChannel DraintoSource Voltage V 80 V DSS D1 D2 GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 74 A D C Current R JC T = 100C 52 (Notes 1, 2, 3) C Steady G1 G2 State Power Dissipation P W T = 25C 90 C D R (Notes 1, 2) JC T = 100C 45 C S1 S2 Continuous Drain T = 25C I 14 A A D Current R JA T = 100C 10 (Notes 1, 2, 3) A Steady MARKING State Power Dissipation T = 25C P 3.1 W D A DIAGRAM R (Notes 1, 2) JA T = 100C 1.5 A D1 D1 S1 D1 Pulsed Drain Current T = 25C, t = 10 s I 336 A A p DM 1 G1 D1 XXXXXX DFN8 5x6 Operating Junction and Storage Temperature T , T 55 to C J stg S2 AYWZZ D2 Range +175 (SO8FL) G2 D2 CASE 506BT Source Current (Body Diode) I 75 A D2 D2 S Single Pulse DraintoSource Avalanche E 297 mJ AS A = Assembly Location Energy (T = 25C, I = 4.7 A) J L(pk) Y = Year Lead Temperature for Soldering Purposes T 260 C W = Work Week L (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State R 1.67 C/W JC JunctiontoAmbient Steady State (Note 2) 48.7 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2019 Rev. 0 NVMFD6H840NL/D