X-On Electronics has gained recognition as a prominent supplier of NVMFS5C450NAFT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5C450NAFT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5C450NAFT1G ON Semiconductor

NVMFS5C450NAFT1G electronic component of ON Semiconductor
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Part No.NVMFS5C450NAFT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6-D3F 40V NFET
Datasheet: NVMFS5C450NAFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.752 ea
Line Total: USD 1128 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.752
3000 : USD 0.7445
6000 : USD 0.7371
9000 : USD 0.7297
12000 : USD 0.7224
15000 : USD 0.7153
24000 : USD 0.7081
30000 : USD 0.701
75000 : USD 0.6939

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 5.4226
10 : USD 1.9553
25 : USD 1.8485
100 : USD 1.5707
500 : USD 1.2928
1000 : USD 1.0674

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMFS5C450NAFT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5C450NAFT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS5C450N MOSFET Power, Single N-Channel 40 V, 3.3 m , 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFS5C450NWF Wettable Flank Option for Enhanced Optical 40 V 3.3 m 10 V 102 A Inspection AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 102 A C D Current R JC S (1,2,3) T = 100C 72 (Notes 1, 3) C Steady NCHANNEL MOSFET State Power Dissipation T = 25C P 68 W D C R (Note 1) JC T = 100C 34 C MARKING Continuous Drain T = 25C I 24 A A D Current R DIAGRAM JA T = 100C 17 (Notes 1, 2, 3) A Steady D State 1 Power Dissipation T = 25C P 3.6 W A D S D R (Notes 1 & 2) JA DFN5 XXXXXX S T = 100C 1.8 A (SO8FL) AYWZZ S Pulsed Drain Current T = 25C, t = 10 s I 554 A A p DM CASE 488AA G D STYLE 1 D Operating Junction and Storage Temperature T , T 55 to C J stg + 175 XXXXXX = 5C450N Source Current (Body Diode) I 65 A S XXXXXX = (NVMFS5C450N) or XXXXXX = 450NWF Single Pulse DraintoSource Avalanche E 215 mJ AS XXXXXX = (NVMFS5C450NWF) Energy (I = 7.0 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C L Y = Year (1/8 from case for 10 s) W = Work Week ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION See detailed ordering, marking and shipping information in the Parameter Symbol Value Unit package dimensions section on page 5 of this data sheet. C/W JunctiontoCase Steady State R 2.2 JC JunctiontoAmbient Steady State (Note 2) R 41 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 2 NVMFS5C450N/DNVMFS5C450N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 20 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 65 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 9.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 2.7 3.3 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 93 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1600 ISS Output Capacitance C 830 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 28 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 23 G(TOT) GS DS D Threshold Gate Charge Q 5.1 G(TH) nC GatetoSource Charge Q 9.0 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 3.5 GD Plateau Voltage V 5.3 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 10 d(ON) Rise Time t 47 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 19 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.78 J Reverse Recovery Time t 37 RR Charge Time t 18 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 19 b Reverse Recovery Charge Q 23 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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