NVTFS4C05NTAG ON Semiconductor

NVTFS4C05N MOSFET Power, Single N-Channel, 8FL 30 V, 3.6 m , 102 A Features Low R to Minimize Conduction Losses DS(on) NVTFS4C05N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 11.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.9 3.6 DS(on) GS D m V = 4.5 V I = 30 A 4.1 5.1 GS D Forward Transconductance g V = 1.5 V, I = 15 A 68 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1988 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 1224 pF OSS GS DS Reverse Transfer Capacitance C 71 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.036 RSS ISS GS DS Total Gate Charge Q 14.5 G(TOT) Threshold Gate Charge Q 2.9 G(TH) nC GatetoSource Charge Q V = 4.5 V, V = 15 V I = 30 A 5.2 GS GS DS D GatetoDrain Charge Q 5.5 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 31 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 d(ON) Rise Time t 30 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 20 d(OFF) Fall Time t 8.0 f TurnOn Delay Time t 8.0 d(ON) Rise Time t 25 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 26 d(OFF) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.77 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.62 J Reverse Recovery Time t 42.4 RR Charge Time t 21.1 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 21.3 b Reverse Recovery Charge Q 34.4 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.