NVTFS4C08NWFTWG ON Semiconductor

NVTFS4C08NWFTWG electronic component of ON Semiconductor
NVTFS4C08NWFTWG ON Semiconductor
NVTFS4C08NWFTWG MOSFETs
NVTFS4C08NWFTWG  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NVTFS4C08NWFTWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS4C08NWFTWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NVTFS4C08NWFTWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R
Datasheet: NVTFS4C08NWFTWG Datasheet (PDF)
Price (USD)
5000: USD 0.527 ea
Line Total: USD 2635 
Availability : 0
  
QtyUnit Price
5000$ 0.527

Availability 0
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.527

   
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We are delighted to provide the NVTFS4C08NWFTWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS4C08NWFTWG and other electronic components in the MOSFETs category and beyond.

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NVTFS4C08N MOSFET Power, Single N-Channel, 8FL 30 V, 5.9 m , 55 A Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFS4C08N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.3 2.2 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.7 5.9 DS(on) GS D m V = 4.5 V I = 18 A 7.2 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1113 ISS Output Capacitance C 702 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 39 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.035 RSS ISS GS DS Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.8 G(TH) nC GatetoSource Charge Q 3.5 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.3 GD Gate Plateau Voltage V 3.4 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 d(ON) Rise Time t 33 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 15 d(OFF) Fall Time t 4.0 f TurnOn Delay Time t 7.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 19 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.66 J Reverse Recovery Time t 28.3 RR Charge Time t 14.5 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 13.8 b Reverse Recovery Charge Q 15.3 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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