NZ23C5V6ALT1G 24 Watt Peak Power Zener Transient Voltage Suppressors SOT23 Dual Common Anode Zeners www.onsemi.com for ESD Protection This dual monolithic silicon Zener diodes is designed for applications 1 3 requiring transient overvoltage protection capability. This is intended 2 for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The dual junction common anode MARKING design protects two separate lines using only one package. This device DIAGRAM is ideal for situations where board space is at a premium. 3 Features SOT23 5V6M CASE 318 SOT23 Package Allows Either Two Separate Unidirectional 1 STYLE 12 Configurations or a Single Bidirectional Configuration 1 2 Working Peak Reverse Voltage Range 3 V Standard Zener Breakdown Voltage Range 5.6 V 5V6 = Specific Device Code M = Date Code Peak Power 24 W 1.0 ms (Unidirectional), = PbFree Package per Figure 5 Waveform (Note: Microdot may be in either location) ESD Rating: Class 3B (> 16 kV) per the Human Body Model ORDERING INFORMATION Class C (> 400 V) per the Machine Model Device Package Shipping Maximum Clamping Voltage Peak Pulse Current Low Leakage < 0.1 A NZ23C5V6ALT1G SOT23 3,000 / (PbFree) Tape & Reel Flammability Rating UL 94 V0 These Devices are PbFree, Halogen Free/BFR Free and are RoHS For information on tape and reel specifications, including part orientation and tape sizes, please Compliant refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case DEVICE MARKING INFORMATION FINISH: Corrosion resistant finish, easily solderable See specific marking information in the device marking column of the table on page 2 of this data sheet. MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2016 Rev. 1 NZ23C5V6AL/DNZ23C5V6ALT1G MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) T 25C P 24 W L pk Total Power Dissipation on FR5 Board (Note 2) T = 25C P 225 mW A D Derate above 25C 1.8 mW/C Thermal Resistance JunctiontoAmbient 556 C/W R JA Total Power Dissipation on Alumina Substrate (Note 3) T = 25C P 300 mW A D Derate above 25C 2.4 mW/C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above T = 25C per Figure 6. A 2. FR5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V C BR RWM V I V R V Working Peak Reverse Voltage F RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I Test Current T I PP V Maximum Temperature Coefficient of V BR BR I Forward Current F UniDirectional TVS V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 0.9 V Max I = 10 mA) 24 WATTS F F Max Zener V I C PP Impedance (Note 5) (Note 6) Breakdown Voltage Z ZT I R 20mA V V (Note 4) (V) I Z I V I V BR T ZK ZK C PP V RWM RWM BR Device Volts A Min Nom Max mA mA V A mV/ C Device Marking NZ23C5V6ALT1G 5V6 1.0 0.1 5.2 5.6 6.0 5.0 11 1600 0.25 8.0 3.0 1.26 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. V measured at pulse test current I at an ambient temperature of 25C. BR T 5. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I ZT ZK Z(AC) = 0.1 I , with the AC frequency = 1.0 kHz. Z(DC) 6. Surge current waveform per Figure 5 and derate per Figure 6 www.onsemi.com 2