QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
April 2007
QSC112, QSC113, QSC114
tm
Plastic Silicon Infrared Phototransistor
Features Description
Tight production distribution The QSC112/113/114 is a silicon phototransistor encap-
PACKAGE DIMENSIONS
sulated in an infrared transparent, black T-1 package.
Steel lead frames for improved reliability in solder
mounting
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
attenuate visible light
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.193 (4.90)
0.052 (1.32)
0.032 (0.082)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27) EMITTER
0.100 (2.54)
Schematic
NOM
COLLECTOR
0.155 (3.94)
0.018 (0.46)
SQ. (2X)
Notes:
EMITTER
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is 0.10 (.25) on all non-nominal dimensions
unless otherwise specied.
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings (T = 25C unless otherwise specied)
A
Symbol Parameter Rating Units
T Operating Temperature -40 to +100 C
OPR
Storage Temperature -40 to +100 C
T
STG
(2,3,4)
T Soldering Temperature (Iron) 240 for 5 sec C
SOL-I
(2,3)
T Soldering Temperature (Flow) 260 for 10 sec C
SOL-F
Collector-Emitter Voltage 30 V
V
CE
V Emitter-Collector Voltage 5 V
EC
(1)
P Power Dissipation 100 mW
D
Notes:
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T =25C)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
Peak Sensitivity Wavelength 880 nm
PS
Reception Angle 4
Collector-Emitter Dark Current V = 10 V, Ee = 0 100 nA
I
CEO CE
BV Collector-Emitter Breakdown I = 1 mA 30 V
CEO C
Emitter-Collector Breakdown I = 100 A 5 V
BV
ECO E
2 (5)
On-State Collector Current QSC112 Ee = 0.5 mW/cm , V = 5 V 14mA
I
C(ON) CE
On-State Collector Current QSC113 2.40 9.60
On-State Collector Current QSC114 4.00
2 (5)
Saturation Voltage Ee = 0.5 mW/cm , I = 0.5 mA 0.4 V
V
CE(sat) C
t Rise Time V = 5 V, R = 100 , I = 2 mA 5.0 s
r CC L C
Fall Time 5.0
t
f
Note:
5. = 880 nm, AlGaAs.
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 2