Ordering number : ENA1270A RD2004LN SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode RD2004LN Ultrahigh-Speed Switching Diode Features High breakdown voltage (V =400V). RRM High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V 400 V RRM Nonrepetitive Peak Reverse Surge Voltage V 400 V RSM Average Output Current I 20 A O Surge Forward Current I Sine wave, 10ms single pulse 180 A FSM Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =1mA 400 V R R Forward Voltage V I =20A 1.3 1.5 V F F Reverse Current I V =400V 100 A R R t1I =10A, di / dt=100A/ s 44 50 ns rr F Reverse Recovery Time t2I =0.5A, I =1A 20 ns rr F R Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 4.0 C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. www.semiconductor-sanyo.com/network N1809 TK IM TC-00002181 / 73008SA TI IM TC-00001521 No. A1270-1/3RD2004LN Package Dimensions unit : mm (typ) 7509-004 4.5 10.0 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 : No Contact 12 3 2 : Cathode 3 : Anode 2.55 2.55 SANYO : TO-220FI(LS) I -- V Cj -- V F F R 3 5 2 f=100kHz 10 3 7 5 3 2 2 1.0 7 5 100 3 2 7 0.1 7 5 5 3 2 3 0.01 7 2 5 3 2 0.001 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 3 57 2 3 57 2 3 57 0.1 1.0 10 100 Forward Voltage, V -- V IT13031 Reverse Voltage, V -- V IT13032 F R I -- t Rth(j-c) -- t FSM 190 7 Current waveform 50Hz sine wave 5 180 I S 170 3 20ms t 160 2 150 1.0 140 7 130 5 120 3 110 100 2 23527 3 5 7 23 2375 2375 2375 2375 0.01 0.1 1.0 0.001 0.01 0.1 1.0 10 Time, t -- s IT13033 Time, t -- s IT13318 No. A1270-2/3 Ta=120C 70C 25C --40C Surge Forward Current, I (Peak) -- A Forward Current, I -- A FSM F 3.6 3.5 2.4 7.2 16.0 14.0 0.6 Transient Thermal Resistance Rth(j-c) -- C / W Junction Capacitance, Cj -- pF 16.1