RGF1D ON Semiconductor

Fast Rectifiers RGF1A - RGF1M Features Glass Passivated Junction For Surface Mounted Applications Low Forward Voltage Drop www.onsemi.com High Current Capability Easy Pick and Place High Surge Current Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant SMA CASE 403AE MARKING DIAGRAM &Y&Z&3 RGF1x &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) RGF1x = Specific Device Code x = A/B/D/G/J/K/M ORDERING INFORMATION Part Number Top Mark Package Shipping RGF1A RGF1A SMA 7500 / Tape & Reel (PbFree) NRVRGF1A RGF1B RGF1B SMA 7500 / Tape & Reel (PbFree) NRVRGF1B RGF1D RGF1D SMA 7500 / Tape & Reel (PbFree) NRVRGF1D RGF1G RGF1G SMA 7500 / Tape & Reel (PbFree) NRVRGF1G RGF1J RGF1J SMA 7500 / Tape & Reel (PbFree) NRVRGF1J RGF1K SMA 7500 / Tape & Reel RGF1K (PbFree) NRVRGF1K RGF1M RGF1M SMA 7500 / Tape & Reel (PbFree) NRVRGF1M For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: February, 2021 Rev. 2 RGF1M/DRGF1A RGF1M SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Symbol Parameter Unit V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM I Average Rectified Forward Current at 1.0 A F(AV) T = 125C L I NonRepetitive Peak Forward Surge 30 A FSM Current: 8.3 ms Single HalfSine Wave T Operating Junction Temperature 65 to +175 C J T Storage Temperature Range 65 to +175 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit P Power Dissipation 1.76 W D R JunctiontoAmbient Thermal Resistance (Note 1) 85 C/W JA R JunctiontoLead Thermal Resistance (Note 1) 28 C/W JL 1. Device mounted on FR4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Value RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Symbol Parameter Conditions Unit V Maximum Forward Voltage I = 1.0 A 1.3 V F F t Maximum Reverse I = 0.5 A, 150 250 500 ns rr F Recovery Time I = 1.0 A, R I = 0.25 A RR I Maximum Reverse Current T = 25C 5.0 A R A at Rated V R T = 125C 100 A C Typical Capacitance V = 4.0 V, 8.5 pF T R f = 1.0 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2