Product Information

RHRG3060_F085

RHRG3060_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor Diodes - General Purpose, Power, Switching
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.6281 ea
Line Total: USD 8.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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RHRG3060_F085
ON Semiconductor

1 : USD 8.6281
10 : USD 3.1093
100 : USD 2.5537
450 : USD 2.1583

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

Hyperfast Rectifier 30 A, 600 V RHRG3060-F085 Description The RHRG3060F085 is a hyperfast diode with soft recovery characteristics (trr < 45 ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ionimplanted epitaxial www.onsemi.com planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical 1 noise in many power switching circuits, thus reducing power loss 1. Cathode 2 in the switching transistors. 2. Anode Features TO2472LD High Speed Switching (t = 45 ns(Typ.) I = 30 A) rr F CASE 340CL Low Forward Voltage (V = 1.64 V(Typ.) I = 30 A) F F Avalanche Energy Rated AECQ101 Qualified and PPAP Capable This Device is PbFree Applications 1 2 Switching Power Supply 2. Anode 1. Cathode Power Switching Circuits Automotive and General Purpose MARKING DIAGRAM Y&Z&3&K RHRG3060 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RHRG3060 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: March, 2020 Rev. 4 RHRG3060F085/DRHRG3060 F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 25C) I 30 A C F(AV) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) I 90 A FSM Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating Junction and Storage Temperature T T 55 to C J, STG +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity RHRG3060F085 RHRG3060 TO2472LD 30 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Parameter Symbol Value Unit Maximum Thermal Resistance, Junction to Case R 0.66 C/W JC Maximum Thermal Resistance, Junction to Ambient R 45 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Test Conditions Min Typ Max Unit Parameter Instantaneous Reverse Current I V = 600 V T = 25C 250 A R R C T = 175C 1.5 mA C Instantaneous Forward Voltage V I = 30 A T = 25C 1.64 2.1 V FM F C (Note 1) T = 175C 1.24 1.7 V C Reverse Recovery Time t I = 1 A, di/dt = 200 A/ s, T = 25C 24 40 ns rr F C (Note 2) V = 390 V CC I = 30 A, di/dt = 200 A/ s, T = 25C 33 45 ns F C V = 390 V CC T = 175C 136 ns C Reverse Recovery Time t I = 30 A, di/dt = 200 A/ s, T = 25C 19 ns a F C V = 390 V CC t 14 ns b Reverse Recovery Charge Q 60 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% 2. Guaranteed by design. www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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