RS1M ON Semiconductor

Fast Rectifiers RS1A - RS1M Features GlassPassivated Junction For Surface Mounted Applications Builtin Strain Relief, Ideal for Automated Placement www.onsemi.com UL Certified: Certificate E326243 These Devices are PbFree and are RoHS Compliant SMA CASE 403AE MARKING DIAGRAM &Y&Z&3 RS1x &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) RS1x = Specific Device Code x = A/B/D/G/J/K/M ORDERING INFORMATION Part Number Marking Package Shipping RS1A RS1A SMA 7500 / Tape & Reel (PbFree) RS1B RS1B RS1D RS1D RS1G RS1G RS1J RS1J RS1K RS1K RS1M RS1M For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2021 Rev. 3 RS1M/DRS1A RS1M SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value RS1A RS1B RS1D RS1G RS1J RS1K RS1M Symbol Parameter Units V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM I Average Rectified Forward Current at 1.0 A F(AV) T = 100C A I NonRepetitive Peak Forward Surge 30 A FSM Current: 8.3 ms Single HalfSine Wave T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit P Power Dissipation 1.19 W D R JunctiontoAmbient Thermal Resistance (Note 1) 105 C/W JA R JunctiontoLead Thermal Resistance (Note 1) 32 C/W JL 1. Device mounted on FR4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Value Test Conditions RS1A RS1B RS1D RS1G RS1J RS1K RS1M Symbol Parameter Unit V Forward Voltage I = 1.0 A 1.3 V F F t Reverse Recovery Time I = 0.5 A, 150 250 500 ns rr F I = 1.0 A, R I = 0.25 A rr I Reverse Current at Rated T = 25C 5.0 A R A V R T = 125C 50 A C Total Capacitance V = 4.0 V, 10 pF T R f = 1.0 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2