General-Purpose Rectifiers S3A-S3N Features LowProfile Package GlassPassivated Junction UL Flammability Classification: 94V0 UL Certified, UL E258596 These are PbFree Devices www.onsemi.com ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value Cathode Symbol Parameter S3A S3B S3D S3G S3J S3K S3M S3N Unit (2) V Maximum 50 100 200 400 600 800 1000 1200 V RRM Repetitive Anode Reverse Voltage (1) SMC V RMS 35 70 140 280 420 560 700 840 V RMS Reverse Voltage CASE 403AG V DC 50 100 200 400 600 800 1000 1200 V R Blocking Voltage A I Average Rectified 3.0 F(AV) Anode Cathode Forward Current (1) (2) T = 105C L A I Non-Repetitive 100 FSM Peak Forward MARKING DIAGRAM Surge Current 8.3 ms Single Half-Sine-Wave C T Storage 55 to +150 STG Temperature Y&Z&3 Range S3X T Operating 55 to +150 C J Junction Temperature Range Y = ON Semiconductor Logo Stresses exceeding those listed in the Maximum Ratings table may damage the &Z = Assembly Plant Code device. If any of these limits are exceeded, device functionality should not be &3 = Numeric Date Code assumed, damage may occur and reliability may be affected. S3X = Specific Device Code THERMAL CHARACTERISTICS (Note 1) X = AN Symbol Parameter Value Unit P Power Dissipation 2.6 W D ORDERING INFORMATION See detailed ordering and shipping information on page 3 of C/W R Thermal Resistance, Junction-to-Ambient 100 JA this data sheet. Thermal Resistance, Junction-to-Lead 13 C/W R JL 1. Device is mounted on FR 4 PCB 0.013 mm. Land pattern size: refer to the package drawing. Trace size: force line = 50 mil & sense line = 4 mil. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted (per leg)) A Value Symbol Parameter Conditions S3A S3B S3D S3G S3J S3K S3M S3N Unit V Maximum Forward Voltage I = 3.0 A 1.2 V F F t Typical Reverse Recovery Time I = 0.5 A, I = 1.0 A, I = 0.25 A 2.5 s rr F R rr I Maximum Reverse Current at 5 T = 25 C A R A Rated V R T = 125 C 250 A C Typical Total Capacitance V = 4.0 V, f = 1.0 MHz 60 pF T R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2020 Rev. 6 S3N/DS3AS3N TYPICAL PERFORMANCE CHARACTERISTICS 4.0 100 3.5 3.0 10 2.5 2.0 1 T = 25C J 1.5 Pulse Width = 300 s 2% Duty Cycle 1.0 0.1 0.5 0.0 0.01 50 60 70 80 90 100 110 120 130 140 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Lead Temperature C Forward Voltage, V V F Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics 120 100 8.3 ms Single Half 100 T = 125C Sine-Wave JEDEC A Method 80 10 60 40 1 20 T = 25C A 0 0.1 0 20 40 60 80 100 120 140 1 2 5 10 20 50 100 Number of Cycles at 60 Hz % of Reverse Voltage, V V R Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs. Reverse Voltage 100 50 10 5 1510 50 100 Reverse Voltage, V V R Figure 5. Total Capacitance www.onsemi.com 2 Peak Forward Surge Current, Average Rectified Forward Current, I A Total Capacitance, C pF FSM I A T F Reverse Current, I A Forward Current, I A R F