BAS116L Switching Diode Features Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel www.onsemi.com Use BAS116LT1G to order the 7 inch/3,000 unit reel S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 1 CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Continuous Reverse Voltage V 75 Vdc R Peak Forward Current I 200 mAdc F SOT23 (TO236) CASE 318 Peak Forward Surge Current I 500 mAdc FM(surge) STYLE 8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board (Note 1) P 225 mW D T = 25C A Derate above 25C 1.8 mW/C JV M Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A JV = Specific Device Code Derate above 25C 2.4 mW/C M = Date Code* Thermal Resistance, JunctiontoAmbient R 417 C/W JA = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to C J stg +150 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. ORDERING INFORMATION 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping BAS116LT1G SOT23 3000 / Tape & Reel SBAS116LT1G (PbFree) BAS116LT3G SOT23 10000 / Tape & NSVBAS116LT3G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 12 BAS116LT1/DBAS116L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 Adc) V 75 Vdc BR (BR) Reverse Voltage Leakage Current (V = 75 Vdc) I 5.0 nAdc R R Reverse Voltage Leakage Current (V = 75 Vdc, T = 150C) 80 R J Forward Voltage (I = 1.0 mAdc) V 900 mV F F Forward Voltage (I = 10 mAdc) 1000 F Forward Voltage (I = 50 mAdc) 1100 F Forward Voltage (I = 150 mAdc) 1250 F Diode Capacitance (V = 0 V, f = 1.0 MHz) C 2.0 pF R D Reverse Recovery Time (I = I = 10 mAdc) (Figure 1) t 3.0 s F R rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 Output 50 INPUT I R Pulse SAMPLING V R OUTPUT PULSE Generator OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2