BAS16H Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 CATHODE ANODE MAXIMUM RATINGS Rating Symbol Value Unit 2 Continuous Reverse Voltage V 100 V R Peak Forward Current I 200 mA F 1 NonRepetitive Peak Forward Surge I 1.8 A FSM(surge) Current, 60 Hz SOD323 Repetitive Peak Forward Current I 1.0 A CASE 477 FRM (Note 2) STYLE 1 NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to J MARKING DIAGRAM surge) 36.0 t = 1 s 18.0 t = 10 s 6.0 t = 100 s t = 1 ms 3.0 A6 M t = 10 ms 1.8 t = 100 ms 1.3 t = 1 s 1.0 A6 = Specific Device Code M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Total Device Dissipation FR-5 Board P 200 mW D BAS16HT1G SOD323 3000 / Tape & Reel (Note 1) (PbFree) T = 25C 1.57 mW/C A Derate above 25C SBAS16HT1G SOD323 3000 /T ape & Reel (PbFree) Thermal Resistance Junction to Ambient 635 C/W R JA BAS16HT3G SOD323 10000 / Tape & Reel Junction and Storage Temperature T , T 55 to C J stg (PbFree) 150 1. FR-4 Minimum Pad. SBAS16HT3G SOD323 10000 / Tape & Reel 2. Square Wave, f = 40 kHz, PW = 200 ns (PbFree) Test Duration = 60 s, T = 25C prior to surge. J For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2019 Rev. 13 BAS16HT1/DBAS16H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2