Product Information

SBAV199LT1G

SBAV199LT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SS DUAL DIO SPCL TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0194 ea
Line Total: USD 58.2

84390 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
624 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

SBAV199LT1G
ON Semiconductor

1 : USD 0.2291
10 : USD 0.1628
25 : USD 0.1611
100 : USD 0.1365
250 : USD 0.1119
500 : USD 0.0874

78570 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

SBAV199LT1G
ON Semiconductor

3000 : USD 0.077

2104 - WHS 3


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 5
Multiples : 5

Stock Image

SBAV199LT1G
ON Semiconductor

5 : USD 0.199
50 : USD 0.1613
150 : USD 0.1451
500 : USD 0.1249
3000 : USD 0.1019
6000 : USD 0.0965

2657 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 5

Stock Image

SBAV199LT1G
ON Semiconductor

5 : USD 0.1846
25 : USD 0.1625
100 : USD 0.1456
140 : USD 0.1183
385 : USD 0.1118

84390 - WHS 5


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

SBAV199LT1G
ON Semiconductor

3000 : USD 0.0194

624 - WHS 6


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 88
Multiples : 1

Stock Image

SBAV199LT1G
ON Semiconductor

88 : USD 0.0874
100 : USD 0.0857

     
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Product Category
RoHS - XON
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BAV199L, SBAV199L Dual Series Switching Diode Features Low Leakage Current Applications www.onsemi.com Medium Speed Switching Times S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant CASE 318 SOT23 STYLE 11 MAXIMUM RATINGS Rating Symbol Value Unit ANODE CATHODE Reverse Voltage V 70 Vdc R 1 2 Forward Current I 215 mAdc F 3 Peak Forward Surge Current I 500 mAdc FM(surge) CATHODE/ANODE Repetitive Peak Reverse Voltage V 70 Vdc RRM Average Rectified Forward Current I 715 mAdc MARKING DIAGRAM F(AV) (Note 1) (Averaged Over Any 20 ms Period) Repetitive Peak Forward Current I 450 mAdc FRM JY M NonRepetitive Peak Forward Current I Adc FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 t = 1.0 s 0.5 JY = Specific Device Code THERMAL CHARACTERISTICS M = Date Code* = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation P D FR5 Board (Note 1), T = 25C 225 mW *Date Code orientation and/or overbar may A Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA ORDERING INFORMATION Total Device Dissipation P D Alumina Substrate (Note 2), T = 25C 300 mW A Device Package Shipping Derate above 25C 2.4 mW/C BAV199LT1G SOT23 3,000 / Thermal Resistance, JunctiontoAmbient R 417 C/W JA (PbFree) Tape & Reel Junction and Storage Temperature T , T 65 to +150 C J stg SBAV199LT1G SOT23 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be SBAV199LT3G SOT23 10,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 10 BAV199LT1/DBAV199L, SBAV199L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) 70 (BR) Reverse Voltage Leakage Current I nAdc R (V = 70 Vdc) 5.0 R (V = 70 Vdc, T = 150C) 80 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mVdc F (I = 1.0 mAdc) 900 F (I = 10 mAdc) 1000 F (I = 50 mAdc) 1100 F (I = 150 mAdc) 1250 F Reverse Recovery Time t s rr (I = I = 10 mAdc) (Figure 1) 3.0 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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