SFR/U9024
Advanced Power MOSFET
FEATURES
BV = -60 V
DSS
n Avalanche Rugged Technology
R = 0.28
DS(on)
n Rugged Gate Oxide Technology
n Lower Input Capacitance
I = -7.8 A
D
n Improved Gate Charge
n Extended Safe Operating Area
D-PAK I-PAK
n Lower Leakage Current : 10 A(Max.) @ V = -60V
DS
n Lower R : 0.206 (Typ.) 2
DS(ON)
1
1
2
3 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
V Drain-to-Source Voltage
-60 V
DSS
o
Continuous Drain Current (T =25 C) -7.8
C
I
A
D o
Continuous Drain Current (T =100 C)
-5.5
C
I Drain Current-Pulsed 1 31 A
DM O
V Gate-to-Source Voltage
30 V
GS
E Single Pulsed Avalanche Energy 2 155 mJ
AS
O
I Avalanche Current 1
-7.8 A
AR O
E Repetitive Avalanche Energy 1 3.2 mJ
AR O
dv/dt Peak Diode Recovery dv/dt 3
-5.5 V/ns
O
o
*
Total Power Dissipation (T =25 C) 2.5 W
A
o
P Total Power Dissipation (T =25 C)
32 W
D C
o
Linear Derating Factor 0.26 W/ C
Operating Junction and
T , T
- 55 to +150
J STG
Storage Temperature Range
o
C
Maximum Lead Temp. for Soldering
T
300
L
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol Characteristic Typ. Max. Units
R Junction-to-Case
-- 3.91
JC
o
R *
Junction-to-Ambient C/W
JA -- 50
R Junction-to-Ambient
-- 110
JA
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. CP-CHANNEL
SFR/U9024
POWER MOSFET
o
Electrical Characteristics (T =25 C unless otherwise specified)
C
Symbol Characteristic Min. Typ. Max. Units Test Condition
BV
V V =0V,I =-250 A
DSS Drain-Source Breakdown Voltage -60 -- --
GS D
o
BV/ T
I =-250 A See Fig 7
J Breakdown Voltage Temp. Coeff. V/ C
-- -0.04 -- D
V
V V =-5V,I =-250 A
GS(th) Gate Threshold Voltage -2.0 -- -4.0
DS D
V =-20V
Gate-Source Leakage , Forward
-- -- -100 GS
I nA
GSS
V =20V
Gate-Source Leakage , Reverse -- -- 100
GS
V =-60V
-- -- -10 DS
I Drain-to-Source Leakage Current
DSS A o
V =-48V,T =125 C
-- -- -100
DS C
Static Drain-Source
4
R V =-10V,I =-3.9A
-- -- 0.28 O
DS(on) GS D
On-State Resistance
4
g --
Forward Transconductance 3.7 -- S V =-30V,I =-3.9A
fs O
DS D
C
Input Capacitance -- 465 600
iss
V =0V,V =-25V,f =1MHz
GS DS
C --
Output Capacitance 140 215
oss pF
See Fig 5
C
Reverse Transfer Capacitance -- 40 60
rss
t --
Turn-On Delay Time 11 30
d(on)
V =-30V,I =-9.7A,
DD D
t
Rise Time -- 21 50
r
R =18
ns
G
t --
Turn-Off Delay Time 29 65
d(off)
See Fig 13 4
5
OO
t
Fall Time -- 20 50
f
Q --
Total Gate Charge 15 19 V =-48V,V =-10V,
g
DS GS
Q
Gate-Source Charge -- 2.9 -- nC I =-9.7A
gs
D
4
5
Q --
Gate-Drain(Miller) Charge 6.0 -- See Fig 6 & Fig 12 OO
gd
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic Min. Typ. Max. Units Test Condition
I Continuous Source Current
-- -- -7.8 Integral reverse pn-diode
S
A
1
I Pulsed-Source Current
O -- -- -31 in the MOSFET
SM
o
4
V Diode Forward Voltage V
-- -- -3.8 T =25 C,I =-7.8A,V =0V
SD O
J S GS
o
t Reverse Recovery Time ns
-- 80 -- T =25 C,I =-9.7A
rr
J F
Q Reverse Recovery Charge C 4
-- 0.22 -- di /dt=100A/ s
O
rr F
Notes ;
1
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
o
2
L=3.0mH, I =-7.8A, V =-25V, R =27 *, Starting T =25 C
O
AS DD G J
o
3
_ _ _
I < -9.7A, di/dt < 250A/ s, V < BV , Starting T =25 C
O
SD DD DSS J
4
_
Pulse Test : Pulse Width = 250 s, Duty Cycle< 2%
O
5
Essentially Independent of Operating Temperature
O