ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Si4532DY Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.R = 0.065 V = 10V DS(ON) GS field effect transistors are produced using ON R = 0.095 V = 4.5V. Semiconductor s propretary, high cell density, DMOS DS(ON) GS technology. This very high density process is especially P-Channel -3.5A,-30V.R = 0.085 V = -10V DS(ON) GS tailored to minimize on-state resistance and provide superior switching performance. These devices are R = 0.190 V = -4.5V. DS(ON) GS particularly suited for low voltage applications such as notebook computer power management and other High density cell design for extremely low R . DS(ON) battery powered circuits where fast switching, low in-line power loss, and resistance to transients are High power and current handling capability in a widely needed. used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package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ublication Order Number: 1999 Semiconductor Components Industries, LLC. Si4532DY/D October-2017, Rev. 2