M1MA151WK, M1MA152WK Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low www.onsemi.com power surface mount applications. SC59 PACKAGE SINGLE SILICON Features SWITCHING DIODES 40 V/80 V 100 mA Fast t , < 3.0 ns rr SURFACE MOUNT Low C , < 2.0 pF D S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SC59 These Devices are PbFree and are RoHS Compliant CASE 318D STYLE 3 MAXIMUM RATINGS (T = 25C) A 3 CATHODE Rating Symbol Value Unit Reverse Voltage V R M1MA151WK 40 Vdc M1MA152WK 80 Peak Reverse Voltage V RM M1MA151WK 40 Vdc 12 M1MA152WK 80 ANODE Forward Current I F MARKING DIAGRAM Single 100 mAdc Dual 150 Peak Forward Current I FM Mx M Single 225 mAdc Dual 340 Peak Forward Surge Current I FSM Single 500 mAdc (Note 1) Mx = Device Code Dual 750 x =T for 151 U for 152 THERMAL CHARACTERISTICS M = Date Code* Rating Symbol Max Unit = PbFree Package (Note: Microdot may be in either location) Power Dissipation P 200 mW D *Date Code orientation may vary depending up- Junction Temperature T 150 C J on manufacturing location. Storage Temperature T 55 to +150 C stg ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. M1MA151WKT1G SC59 3,000 / 1. t = 1 sec (PbFree) Tape & Reel SM1MA151WKT1G SC59 3,000 / (PbFree) Tape & Reel M1MA152WKT1G SC59 3,000 / Tape & (PbFree) Reel NSVM1MA152WKT1G SC59 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 12 M1MA151WKT1/DM1MA151WK, M1MA152WK ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I R M1MA151WK V = 35 V 0.1 Adc R M1MA152WK V = 75 V 0.1 R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V R M1MA151WK I = 100 A 40 Vdc R M1MA152WK 80 Diode Capacitance C V = 0, f = 1.0 MHz 2.0 pF D R Reverse Recovery Time (Figure 1) t I = 10 mA, V = 6.0 V, 3.0 ns rr F R (Note 2) R = 100 , I = 0.1 I L rr R 2. t Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE t r t t p rr I F t t 10% R L I = 0.1 I A rr R 90% I = 10 mA F V = 6 V R V R R = 100 L t = 2 s p t = 0.35 ns r Figure 1. Reverse Recovery Time Equivalent Test Circuit www.onsemi.com 2