SMBJ100A-T1 ON Semiconductor

SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors November 2014 SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability on 10/1000 s Waveform. Excellent Clamping Capability Low-Incremental Surge Resistance Fast Response Time: Typically Less than 1.0 ps from 0 V SMB/DO-214AA Band denotes cathode on unidirectional devices only. to BV minimum for Unidirectional and 5.0 ns for Bidirectional No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in Typical I Less than 1.0 A Above 10 V R both directions suitable for bi-directional applications. UL Certificate E258596 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit P Peak Pulse Power Dissipation on 10/1000 s Waveform 600 W PPM I Peak Pulse Current on 10/1000 s Waveform See Table A PPM Non-Repetitive Peak Forward Surge Current I 100 A FSM (1) Superimposed on Rated Load (JEDEC Method) T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Note: 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Electrical Characteristics Values are at T = 25C unless otherwise noted. A Breakdown Reverse Clamping Reverse Uni-Directional Test Peak Pulse Voltage Part Stand-Off Voltage Leakage Bi-Directional (C) Current Current (2) V (V) Marking Voltage at I at V BR PPM RWM Device I (mA) I (A) (3) T PPM V (V) V (V) I (A) Min. Max. RWM C R SMBJ5V0(C)A KE 5.0 6.40 7.00 10 9.2 65.2 800 SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800 SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7V0(C)A KM 7.0 7.78 8.60 10 12.0 50.0 200 SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100 SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50 SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20 SMBJ9V0(C)A KV 9.0 10.0 11.1 1 15.4 39.0 10 SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5 SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33.0 5 SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5 SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5 SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5 SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5 SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5 SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5 SMBJ18(C)A LT 18 20.0 22.1 1 29.2 20.5 5 SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5 SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5 SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5 SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5 SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5 SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5 SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5 SMBJ36(C)A MP 36 40.0 44.2 1 58.1 10.3 5 SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5 SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5 SMBJ45(C)A MV 45 50.0 55.3 1 72.7 8.3 5 SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5 SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5 SMBJ54(C)A NE 54 60.0 66.3 1 87.1 6.9 5 SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5 SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5 SMBJ64(C)A NM 64 71.1 78.6 1 103.0 5.8 5 SMBJ70(C)A NP 70 77.8 86.0 1 113.0 5.3 5 SMBJ75(C)A NR 75 83.3 92.1 1 121.0 5.0 5 SMBJ78(C)A NT 78 86.7 95.8 1 126.0 4.8 5 Notes: 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with V < 10 V, the I max limit is doubled. RWM R 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 2