SMMSD103T1G ON Semiconductor

MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features MMSD103T1G, SMMSD103T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I A R (V = 200 V) 1.0 R (V = 200 V, T = 150C) 100 R J Reverse Breakdown Voltage V V (BR) (I = 100 A) 250 BR Forward Voltage V mV F (I = 100 mA) 1000 F (I = 200 mA) 1250 F Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 5.0 R Reverse Recovery Time t ns rr (I = I = 30 mA, R = 100 ) 50 F R L 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. I = 3.0 mA R(REC) 50 INPUT 50 OUTPUT I R SAMPLING V PULSE R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at I = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit