Product Information

SN74ABT16245ADGGR

SN74ABT16245ADGGR electronic component of ON Semiconductor

Datasheet
BIPOLAR TRANSISTOR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6805 ea
Line Total: USD 0.6805

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 5
Multiples : 1

Stock Image

SN74ABT16245ADGGR
ON Semiconductor

5 : USD 0.3438
10 : USD 0.2709
100 : USD 0.1995

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Current Ic Continuous A Max
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Min
Operating Temperature Range
Termination Type
Transistor Type
LoadingGif

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NPN - MPS650, MPS651 PNP - MPS750, MPS751 Amplifier Transistors Features These are PbFree Devices* NPN MPS650, MPS651 PNP MPS750, MPS751 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 mAdc, I = 0) MPS650, MPS750 40 C B MPS651, MPS751 60 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0 ) MPS650, MPS750 60 C E MPS651, MPS751 80 Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 0, I = 10 Adc) C E Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) MPS650, MPS750 0.1 CB E (V = 80 Vdc, I = 0) MPS651, MPS751 0.1 CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 50 mA, V = 2.0 V) 75 C CE (I = 500 mA, V = 2.0 V) 75 C CE (I = 1.0 A, V = 2.0 V) 75 C CE (I = 2.0 A, V = 2.0 V) 40 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 2.0 A, I = 200 mA) 0.5 C B (I = 1.0 A, I = 100 mA) 0.3 C B BaseEmitter On Voltage V 1.0 Vdc BE(on) (I = 1.0 A, V = 2.0 V) C CE Base Emitter Saturation Voltage V 1.2 Vdc BE(sat) (I = 1.0 A, I = 100 mA) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f 75 MHz T (I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 2. f is defined as the frequency at which h extrapolates to unity. T fe NPN PNP 300 250 T = 125C J 270 225 V = -2.0 V V = 2.0 V CE CE T = 125C J 240 200 210 175 25C 150 180 25C 150 125 120 100 - 55C - 55C 90 75 60 50 30 25 0 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A -10 - 20 - 50 -100 - 200 - 500 -1.0 A -2.0 A -4.0 A I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. MPS650, MPS651 Figure 2. MPS750, MPS751 Typical DC Current Gain Typical DC Current Gain

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