SNZF220DFT1G ON Semiconductor

NZF220DFT1G, SNZF220DFT1G EMI Filter with ESD Protection Features NZF220DFT1G, SNZF220DFT1G ELECTRICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit V Zener Breakdown Voltage, I = 1 mA 6.0 8.0 V Z ZT I Zener Leakage Current, V = 3 V N/A 1.0 A r R V Zener Forward Voltage, I = 50 mA N/A 1.5 V F F Capacitance Zener Internal Capacitance, 0 V Bias 7.0 10 pF Capacitance Zener/Resistor Array Line Capacitance 17.6 26.4 pF Resistor Resistance 90 110 F (Note 2) Cutoff Frequency 220 MHz C 2. 50 Source and 50 Lead Termination per Figure 2. Applications Information Suppressing Noise at the Source Filter all I/O signals leaving the noisy environment Locate I/O driver circuits close to the connector Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver Filter all I/O signals entering the unit Locate the I/O filters as close as possible to the connector Minimizing Noise Coupling Use multilayer PCBs to minimize power and ground inductance Keep clock circuits away from the I/O connector Ground planes should be used whenever possible Minimize the loop area for all high speed signals Provide for adequate power decoupling ESD Protection Locate the suppression devices as close to the I/O connector as possible Minimize the PCB trace length to the suppression device Minimize the PCB trace length for the ground return for the suppression device