SS26 ON Semiconductor

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SS26T3G, NRVBSS26T3G, NRVBSS26NT3G, www.onsemi.com SRVBSS26NT3G . employing the Schottky Barrier principle in a metaltosilicon SCHOTTKY BARRIER power rectifier. Features epitaxial construction with oxide passivation RECTIFIER and metal overlay contact. Ideally suited for low voltage, high 2.0 AMPERES frequency switching power supplies free wheeling diodes and 60 VOLTS polarity protection diodes. Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction SMB Guardring for Overvoltage Protection CASE 403A Low Forward Voltage Drop MARKING DIAGRAM NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 AYWW Qualified and PPAP Capable* SS26 PbFree Package is Available Mechanical Characteristics: SS26 = Specific Device Code Case: Molded Epoxy A = Assembly Location** Epoxy Meets UL 94, VO at 0.125 in Y = Year Weight: 95 mg (approximately) WW = Work Week = PbFree Package Cathode Polarity Band (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds **The Assembly Location code (A) is front side Available in 12 mm Tape, 2500 Units per 13 Reel, Add T3 Suffix optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), to Part Number the front side assembly code may be blank. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ORDERING INFORMATION ESD Ratings: Human Body Model = 3B Shipping Package Device Machine Model = C SS26T3G SMB 2500 / Marking: SS26 Tape & Reel (PbFree) NRVBSS26T3G* SMB 2500 / (PbFree) Tape & Reel NRVBSS26NT3G* SMB 2500 / (PbFree) Tape & Reel SMB 2500 / SRVBSS26NT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 7 SS26/DSS26T3G, NRVBSS26T3G, NRVBSS26NT3G, SRVBSS26NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I 2.0 A O (At Rated V , T = 95C) R L NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt 10,000 V/ s (Rated V , T = 25C) R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 24 C/W JL Thermal Resistance JunctiontoAmbient (Note 2) R 80 JA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Value T = 25C T = 125C Characteristic Symbol Unit J J v 0.51 0.475 V Maximum Instantaneous Forward Voltage (Note 3) F 0.63 0.55 (i = 1.0 A) F (i = 2.0 A) F Maximum Instantaneous Reverse Current (Note 3) I 0.2 20 mA R (V = 60 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2