Product Information

STD6600NT4G

STD6600NT4G electronic component of ON Semiconductor

Datasheet
Switching Controllers

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.1005 ea
Line Total: USD 251.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STD6600NT4G
ON Semiconductor

1 : USD 0.1144
301 : USD 0.1026
1251 : USD 0.0965
5001 : USD 0.0903
40001 : USD 0.0872

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

STD6600NT4G
ON Semiconductor

2500 : USD 0.1005
5001 : USD 0.0903
40001 : USD 0.0872

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 141
Multiples : 141

Stock Image

STD6600NT4G
ON Semiconductor

141 : USD 0.1144
301 : USD 0.1026
1251 : USD 0.0965

     
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NTD6600N Power MOSFET 100 V, 12 A, NChannel, Logic Level DPAK Features SourcetoDrain Diode Recovery Time Comparable to a NTD6600N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 100 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 100 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 100 Vdc, T = 125C) 10 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) V = V I = 250 Adc) 1.0 1.5 2.0 Vdc DS GS, D 4.4 mV/C Temperature Coefficient (Negative) Static DraintoSource OnState Resistance (V = 5.0 Vdc, I = 6.0 Adc) R 118 146 m GS D DS(on) DraintoSource OnVoltage (V = 5.0 Vdc, I = 12 Adc) V 1.5 2.2 Vdc GS D DS(on) Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) g 10 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 463 700 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 116 225 oss f = 1.0 MHz) Reverse Transfer Capacitance C 36 75 rss SWITCHING CHARACTERISTICS (Notes 4 & 5) TurnOn Delay Time t 10.5 20 ns d(on) Rise Time t 75 140 r (V = 80 Vdc, I = 6.0 Adc, DD D V = 5.0 Vdc, R = 9.1 ) GS G TurnOff Delay Time t 26 40 d(off) Fall Time t 50 90 f Total Gate Charge Q 11.3 20 nC tot (V = 80 Vdc, I = 6.0 Adc, DS D GatetoSource Charge Q 1.9 gs V = 5.0 Vdc) GS GatetoDrain Charge Q 7.4 gd BODYDRAIN DIODE RATINGS (Note 4) Diode Forward OnVoltage (I = 12 Adc, V = 0 Vdc) V 0.90 1.4 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 125C) 0.80 S GS J Reverse Recovery Time t 80 ns rr (I = 12 Adc, V = 0 Vdc, S GS t 50 a dI /dt = 100 A/ s) S t 30 b Reverse Recovery Stored Charge Q 0.240 C RR 4. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device Package Shipping NTD6600N DPAK NTD6600N1 DPAK3 75 Units/Rail NTD6600N1G DPAK3 (PbFree) NTD6600NT4 DPAK 2500 Tape & Reel NTD6600NT4G DPAK (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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