Product Information

SZESD9X3.3ST5G

SZESD9X3.3ST5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diodes - Transient Voltage Suppressors SOD-923 2 EUT SNG CU PBF

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.1903 ea
Line Total: USD 1522.4

0 - Global Stock
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 8000
Multiples : 8000

Stock Image

SZESD9X3.3ST5G
ON Semiconductor

8000 : USD 0.1784
16000 : USD 0.1765
24000 : USD 0.1755
48000 : USD 0.1729
56000 : USD 0.1716

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SZESD9X3.3ST5G
ON Semiconductor

1 : USD 1.3623
10 : USD 0.6435
100 : USD 0.3494
500 : USD 0.2746

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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ESD Protection Diode MicroPackaged Diodes for ESD Protection ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, www.onsemi.com and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in 12 cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. PIN 1. CATHODE Specification Features: 2. ANODE Low Clamping Voltage Small Body Outline Dimensions: SCALE 8:1 MARKING 0.039 x 0.024 (1.0 mm x 0.60 mm) DIAGRAM Low Body Height: 0.017 (0.43 mm) Max Standoff Voltage: 3.3 V 12 V X M Low Leakage SOD923 Response Time is Typically < 1 ns CASE 514AB ESD Rating of Class 3 (> 16 kV) per Human Body Model X = Specific Device Code IEC6100042 Level 4 ESD Protection M = Date Code SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and ORDERING INFORMATION PPAP Capable These are PbFree Devices Device Package Shipping Mechanical Characteristics: ESD9XxxST5G SOD923 8000/Tape & Reel CASE: Void-free, transfer-molded, thermosetting plastic (PbFree) Epoxy Meets UL 94 V0 SZESD9XxxST5G SOD923 8000/Tape & Reel LEAD FINISH: 100% Matte Sn (Tin) (PbFree) MOUNTING POSITION: Any For information on tape and reel specifications, QUALIFIED MAX REFLOW TEMPERATURE: 260C including part orientation and tape sizes, please Device Meets MSL 1 Requirements refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Rating Symbol Value Unit DEVICE MARKING INFORMATION IEC 6100042 (ESD) Contact 30 kV Air 30 See specific marking information in the device marking column of the table on page 2 of this data sheet. ESD Voltage Per Human Body Model 16 kV Per Machine Model 400 V Total Power Dissipation on FR5 Board (Note 1) T = 25C P 150 mW A D Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2020 Rev. 9 ESD9X3.3ST5G/DESD9X3.3ST5G Series, SZESD9X3.3ST5G Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V V V C BR RWM R RWM V I V R F V Breakdown Voltage I BR T I T I Test Current T I Forward Current F V Forward Voltage I F F P Peak Power Dissipation pk I PP C Max. Capacitance V = 0 and f = 1 MHz R *See Application Note AND8308/D for detailed explanations of UniDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA for all types) A F F V (V) V (V) BR C V Max I (A) P (W) C I ( A) I Max I RWM R T PP PP pk (V) V (Note 3) (8 x 20 s) (pF) (Note 2) I (Note 3) V RWM T C Per IEC6100042 Device (Note 4) Marking Max Max Min mA Max Typ Typ Device* ESD9X3.3ST5G A 3.3 2.5 5.0 1.0 9.8 10.4 102 80 ESD9X5.0ST5G B 5.0 1.0 6.2 1.0 8.7 12.3 107 65 Figures 1 and 2 (Note 5) ESD9X7.0ST5G 5** 7.0 0.1 7.5 1.0 4.0 25 100 65 ESD9X12ST5G C 12 1.0 13.5 1.0 5.9 23.7 140 30 * Include SZ-prefix devices where applicable. **Rotated 270 degrees. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 5. ESD9X5.0ST5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 6100042 Negative 8 kV contact per IEC 6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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