X-On Electronics has gained recognition as a prominent supplier of SZMMBZ15VAWT1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZMMBZ15VAWT1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SZMMBZ15VAWT1G ON Semiconductor

SZMMBZ15VAWT1G electronic component of ON Semiconductor
SZMMBZ15VAWT1G ON Semiconductor
SZMMBZ15VAWT1G ESD Suppressors / TVS Diodes
SZMMBZ15VAWT1G  Circuit Protection

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See Product Specifications
Part No. SZMMBZ15VAWT1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diodes - Transient Voltage Suppressors ZEN DUAL 15V
Datasheet: SZMMBZ15VAWT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4144 ea
Line Total: USD 0.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4144
10 : USD 0.3098
100 : USD 0.1859
500 : USD 0.1488
1000 : USD 0.1147
3000 : USD 0.0966
9000 : USD 0.092

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.4885

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SZMMBZ15VAWT1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZMMBZ15VAWT1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series Zener Diodes, 40 Watt Peak Power SC70 Dual Common Anode Zeners www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects SC70 two separate lines using only one package. These devices are ideal for CASE 419 situations where board space is at a premium. STYLE 4 Features CATHODE 1 SC70 Package Allows Either Two Separate Unidirectional 3 ANODE Configurations or a Single Bidirectional Configuration CATHODE 2 Standard Zener Breakdown Voltage Range: 15 33 V Peak Power 40 W 1.0 ms (Unidirectional), MARKING DIAGRAM per Figure 5 Waveform ESD Rating: Class 3B (> 16 kV) per the Human Body Model XX M Class C (> 400 V) per the Machine Model Low Leakage < 5.0 A 1 Flammability Rating UL 94 V0 AECQ101 Qualified and PPAP Capable SZMMBZxxVAWT1G XX = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code Site and Control Change Requirements = PbFree Package These are PbFree Devices* (Note: Microdot may be in either location) Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable Device Package Shipping MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MMBZxxVAWT1G SC70 3,000 / 260C for 10 Seconds (PbFree) Tape & Reel Package designed for optimal automated board assembly SZMMBZxxVAWT1G SC70 3,000 / Small package size for high density applications (PbFree) Tape & Reel Available in 8 mm Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please Use the Device Number to order the 7 inch/3,000 unit reel. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2018 Rev. 5 MMBZ27VAW/DMMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) P W pk T 25C 40 L Total Power Dissipation on FR5 Board (Note 2) P D T = 25C 200 mW A Derate above 25C 1.6 mW/C Thermal Resistance JunctiontoAmbient R 618 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above T = 25C per Figure 6. A 2. FR5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I V Clamping Voltage I F C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T V V V C BR RWM V I Test Current I T V R F I T V Maximum Temperature Coefficient of V BR BR I Forward Current F V Forward Voltage I F F I PP Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK UniDirectional Zener Z Maximum Zener Impedance I ZK ZK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 0.9 V Max I = 10 mA) F F Breakdown Voltage V I (Note 4) C PP I R V V (Note 3) (V) I V I V V RWM BR T C PP RWM BR Device Volts nA Min Nom Max mA V A mV/ C Marking Device* MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 46 0.87 30.4 3. V measured at pulse test current I at an ambient temperature of 25C. BR T 4. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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