Product Information

SZMMBZ20VALT1G

SZMMBZ20VALT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diode Arrays ZEN REG .225W SPCL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.07 ea
Line Total: USD 0.07

104612 - Global Stock
Ships to you between
Thu. 02 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
104612 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

SZMMBZ20VALT1G
ON Semiconductor

1 : USD 0.07
10 : USD 0.0692
25 : USD 0.0684
100 : USD 0.0462
250 : USD 0.0348
500 : USD 0.0324
1000 : USD 0.0284
3000 : USD 0.0264
6000 : USD 0.026
15000 : USD 0.0255
30000 : USD 0.0255
75000 : USD 0.0255

892 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 10
Multiples : 10

Stock Image

SZMMBZ20VALT1G
ON Semiconductor

10 : USD 0.0668
100 : USD 0.0548
300 : USD 0.0488
3000 : USD 0.0443
6000 : USD 0.0406
9000 : USD 0.0389

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Height
Length
Type
Width
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT23 Dual Common Anode Zeners www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These SOT23 devices are ideal for situations where board space is at a premium. CASE 318 STYLE 12 Features SOT23 Package Allows Either Two Separate Unidirectional CATHODE 1 Configurations or a Single Bidirectional Configuration 3 ANODE Standard Zener Breakdown Voltage Range 5.6 V to 47 V CATHODE 2 Peak Power 24 or 40 W 1.0 ms (Unidirectional), per Figure 6 Waveform MARKING DIAGRAM ESD Rating: Class 3B (> 16 kV) per the Human Body Model Class C (> 400 V) per the Machine Model ESD Rating of IEC6100042 Level 4, 30 kV Contact Discharge XXXM Maximum Clamping Voltage Peak Pulse Current Low Leakage < 5.0 A 1 Flammability Rating UL 94 V0 SZ Prefix for Automotive and Other Applications Requiring Unique XXX = Specific Device Code Site and Control Change Requirements AECQ101 Qualified and M = Date Code = PbFree Package PPAP Capable (Note: Microdot may be in either location) These Devices are PbFree and are RoHS Compliant Mechanical Characteristics ORDERING INFORMATION See detailed ordering and shipping information on page 2 of CASE: Void-free, transfer-molded, thermosetting plastic case this data sheet. FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: DEVICE MARKING INFORMATION 260C for 10 Seconds See specific marking information in the device marking Package designed for optimal automated board assembly column of the table on page 3 of this data sheet. Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. Semiconductor Components Industries, LLC, 1996 1 Publication Order Number: August, 2016 Rev. 20 MMBZ5V6ALT1/DMMBZxxxALT1G Series, SZMMBZxxxALT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G P 24 W pk T 25C MMBZ12VALT1G thru MMBZ47VALT1G 40 L Total Power Dissipation on FR5 Board (Note 2) P D T = 25C 225 mW A Derate above 25C 1.8 mW/C Thermal Resistance JunctiontoAmbient R 556 C/W JA Total Power Dissipation on Alumina Substrate (Note 3) P D T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 6 and derate above T = 25C per Figure 7. A 2. FR5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device Package Shipping MMBZ5V6ALT1G SOT23 3,000 / Tape & Reel (PbFree) SZMMBZ5V6ALT1G* SOT23 3,000 / Tape & Reel (PbFree) MMBZ5V6ALT3G SOT23 10,000 / Tape & Reel (PbFree) MMBZ6VxALT1G SOT23 3,000 / Tape & Reel (PbFree) SZMMBZ6VxALT1G* SOT23 3,000 / Tape & Reel (PbFree) MMBZ6VxALT3G SOT23 10,000 / Tape & Reel (PbFree) MMBZ9V1ALT1G SOT23 3,000 / Tape & Reel (PbFree) MMBZ9V1ALT13G SOT23 10,000 / Tape & Reel (PbFree) MMBZxxVALT1G SOT23 3,000 / Tape & Reel (PbFree) SZMMBZxxVALT1G* SOT23 3,000 / Tape & Reel (PbFree) MMBZxxVALT3G SOT23 10,000 / Tape & Reel (PbFree) SZMMBZxxVALT3G* SOT23 10,000 / Tape & Reel (PbFree) SZMMBZxxVTALT1G* SOT23 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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