NUP2115L, SZNUP2115L ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The SZ/NUP2115L has been designed to protect the FlexRay www.onsemi.com transceiver from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a SOT23 single compact SOT23 package, giving the system designer a low DUAL BIDIRECTIONAL cost option for improving system reliability and meeting stringent EMI requirements. VOLTAGE SUPPRESSOR 200 W PEAK POWER Features 200 W Peak Power Dissipation per Line (8/20 s Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) SOT23 Low Capacitance HighSpeed FlexRay Data Rates CASE 318 IEC Compatibility: IEC 6100042 (ESD): Level 4 STYLE 27 IEC 6100044 (EFT): 50 A 5/50 ns IEC 6100045 (Lighting) 3.0 A (8/20 s) PIN 1 ISO 76371, Nonrepetitive EMI Surge Pulse 2, 8.0 A PIN 3 (1/50 s) PIN 2 ISO 76373, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns) Flammability Rating UL 94 V0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These are PbFree Devices Applications Automotive Networks FlexRay Bus MARKING DIAGRAM 25WM 1 25W = Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2017 Rev. 4 NUP2115L/DNUP2115L, SZNUP2115L MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation, 8 x 20 s Double Exponential Waveform (Note 1) 200 W T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body Model (HBM) 8.0 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 24 V RWM V Breakdown Voltage I = 1 mA (Note 3) 26.2 32 V BR T I Reverse Leakage Current V = 24 V 15 100 nA R RWM V Clamping Voltage I = 1 A (8/20 s Waveform) 33.4 36.6 V C PP (Note 4) V Clamping Voltage I = 3 A (8/20 s Waveform) 44 50 V C PP (Note 4) I Maximum Peak Pulse Current 8/20 s Waveform (Note 4) 3.0 A PP C Capacitance V = 0 V, f = 1 MHz (Line to GND) 10 pF J R C Diode Capacitance Matching V = 0 V, 5 MHz (Note 5) 0.1 2 % R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. 5. C is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics J table. ORDERING INFORMATION Device Package Shipping NUP2115LT1G SOT23 3,000 / Tape & Reel (PbFree) SZNUP2115LT1G SOT23 3,000 / Tape & Reel (PbFree) NUP2115LT3G SOT23 10,000 / Tape & Reel (PbFree) SZNUP2115LT3G SOT23 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2