SZNUP3105LT3G ON Semiconductor

SZNUP3105LT3G electronic component of ON Semiconductor
SZNUP3105LT3G ON Semiconductor
SZNUP3105LT3G ESD Protection Diodes / TVS Diodes
SZNUP3105LT3G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SZNUP3105LT3G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZNUP3105LT3G ESD Protection Diodes / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. SZNUP3105LT3G
Manufacturer: ON Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes SOT-23 27 CAN BUS
Datasheet: SZNUP3105LT3G Datasheet (PDF)
Price (USD)
10000: USD 0.1658 ea
Line Total: USD 1658 
Availability : 9700
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
10000$ 0.1658
20000$ 0.1564

Availability 9700
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.1875
5000$ 0.1865
7500$ 0.1856
10000$ 0.1801
30000$ 0.1591
50000$ 0.1584
100000$ 0.1575


Availability 9700
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.1658
20000$ 0.1564


Availability 6677
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 906
Multiples : 1
QtyUnit Price
906$ 0.287
995$ 0.2616
1004$ 0.2591
1157$ 0.2248
1167$ 0.2228
1312$ 0.1983
1481$ 0.1756
3000$ 0.1678
6000$ 0.1674

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SZNUP3105LT3G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZNUP3105LT3G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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NUP3105L, SZNUP3105L ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP3105L has been designed to protect the CAN transceiver in 24 V systems from ESD and other harmful transient voltage events. This device provides bidirectional protection for each www.onsemi.com data line with a single compact SOT23 package, giving the system designer a low cost option for improving system reliability and SOT23 meeting stringent EMI requirements. DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR Features 350 W PEAK POWER 350 W Peak Power Dissipation per Line (8/20 sec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance HighSpeed CAN Data Rates IEC Compatibility: IEC 6100042 (ESD): Level 4 IEC 6100044 (EFT): 50 A 5/50 ns SOT23 IEC 6100045 (Lighting) 8.0 A (8/20 s) CASE 318 Flammability Rating UL 94 V0 STYLE 27 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN 1 PPAP Capable PIN 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN 2 Compliant CAN H Applications CAN Industrial Control Networks CAN Bus CAN L Transceiver Smart Distribution Systems (SDS ) DeviceNet NUP3105L Automotive Networks Low and HighSpeed CAN Fault Tolerant CAN Trucks MARKING DIAGRAM 27F M 1 27F = Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2017 Rev. 4 NUP3105L/DNUP3105L, SZNUP3105L MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation W 8 x 20 s Double Exponential Waveform (Note 1) 350 T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body model (HBM) 8.0 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 32 V RWM V Breakdown Voltage I = 1 mA (Note 3) 35.6 V BR T I Reverse Leakage Current V = 32 V 100 nA R RWM V Clamping Voltage 59 V I = 5 A (8/20 s Waveform) C PP (Note 4) V Clamping Voltage I = 8 A (8/20 s Waveform) 66 V C PP (Note 4) I Maximum Peak Pulse Current 8/20 s Waveform (Note 4) 8.0 A PP CJ Capacitance V = 0 V, f = 1 MHz (Line to GND) 30 pF R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J 12.0 110 WAVEFORM PULSE WAVEFORM 100 PARAMETERS 8 x 20 s per Figure 1 90 10.0 t = 8 s r 80 t = 20 s d ct 70 8.0 60 t = I /2 50 d PP 6.0 40 30 20 4.0 10 0 2.0 0 5 10 15 20 25 30 45 50 55 60 65 70 t, TIME ( s) V , CLAMPING VOLTAGE (V) C Figure 1. Pulse Waveform, 8/20 s Figure 2. Clamping Voltage vs Peak Pulse Current www.onsemi.com 2 % OF PEAK PULSE CURRENT I , PEAK PULSE CURRENT (A) PP

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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