Product Information

SZNZL7V5AXV3T1G

SZNZL7V5AXV3T1G electronic component of ON Semiconductor

Datasheet
Zener Diodes SC-89 3 EUT SNGL CPR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5632 ea
Line Total: USD 0.56

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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SZNZL7V5AXV3T1G
ON Semiconductor

1 : USD 0.475
10 : USD 0.3611
100 : USD 0.2084
500 : USD 0.1454
1000 : USD 0.1151
3000 : USD 0.0994
9000 : USD 0.0884
24000 : USD 0.0837
45000 : USD 0.0767

     
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NZL5V6AXV3T1 Series ESD Protection Diode Dual Common Anode These dual monolithic silicon ESD protection diodes are intended for use in voltage and ESD sensitive equipment such as computers, www.onsemi.com printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These 1 PIN 1. CATHODE devices are ideal for situations where board space is at a premium. 3 2. CATHODE 2 3. ANODE Specification Features: MARKING SC89 Package Allows Either Two Separate Unidirectional DIAGRAM Configurations or a Single Bidirectional Configuration 3 ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Lx SC89 Meets IEC6100042 Level 4 CASE 463C Low Leakage < 5.0 A STYLE 4 1 2 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and L = Device Code x = Specific Device PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS = PbFree Package Compliant (Note: Microdot may be in either location) Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, Transfer-molded, Thermosetting Plastic Epoxy Meets UL 94, V0 Device Package Shipping NZL5V6AXV3T1G SC89 3000/Tape & Reel LEAD FINISH: 100% Matte Sn (Tin) SZNZL5V6AXV3T1G SC89 3000/Tape & Reel MOUNTING POSITION: Any NZL6V8AXV3T1G SC89 3000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: SZNZL6V8AXV3T1G SC89 3000/Tape & Reel 260C Device Meets MSL 1 Requirements NZL6V8AXV3T3G SC89 10000/Tape & Reel SZNZL6V8AXV3T3G SC89 10000/Tape & Reel NZL7V5AXV3T1G SC89 3000/Tape & Reel SZNZL7V5AXV3T1G SC89 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2018 Rev. 7 NZL5V6AXV3T1/D MNZL5V6AXV3T1 Series MAXIMUM RATINGS Rating Symbol Value Unit Total Power Dissipation on FR5 Board (Note 1) T = 25C P 240 mW A D Derate above 25C 1.9 mW/C Thermal Resistance Junction to Ambient R 525 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L IEC6100042 Contact ESD 10 kV IEC6100042 Air 10 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 board with minimum recommended mounting pad. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V C BR RWM V I V V Breakdown Voltage I R F BR T I T I Test Current T I Forward Current F V Forward Voltage I F F I PP UniDirectional Zener ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max I = 10 mA for all types) A F F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) Breakdown Voltage Surge V (V) C I = 1.0 V (V) Max I P I PP C PP pk R A Max I (A) (W) V V (Note 2) (V) Iz V BR T PP RWM RWM Device Marking V A Min Nom Max mA Typ Max Typ Device NZL5V6AXV3T1 L0 3.0 5.0 5.32 5.6 5.88 5.0 7.0 10.1 4.8 50 NZL6V8AXV3T1 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL6V8AXV3T3 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL7V5AXV3T1 L3 5.0 1.0 7.12 7.5 7.88 5.0 8.8 13.5 5.7 75 2. V measured at pulse test current I at an ambient temperature of 25C. BR T Surge current waveform per Figure 5. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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