Product Information

SZSM05T1G

SZSM05T1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes ZEN MONOLITHIC DUAL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1891 ea
Line Total: USD 0.19

13 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

SZSM05T1G
ON Semiconductor

1 : USD 0.1891
10 : USD 0.1891

4 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SZSM05T1G
ON Semiconductor

1 : USD 0.3506
10 : USD 0.3425
30 : USD 0.3384
100 : USD 0.3324

     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Capacitance
Brand
Channels
Mounting Style
Case Height
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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SM05T1G Series ESD Protection Diode Array Dual Common Anode These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such www.onsemi.com as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: SOT23 CASE 318 SOT23 Package Allows Either Two Separate Unidirectional STYLE 12 Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range 5.0 V to 36 V 1 PIN 1. CATHODE 3 2. CATHODE Peak Power 300 Watt (8/20 s) 2 3. ANODE Low Leakage 1.0 A Flammability Rating UL 94 V0 MARKING DIAGRAM SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable xxM M These are PbFree Devices Mechanical Characteristics: 1 CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case xxM = Device Code FINISH: Corrosion Resistant Finish, Easily Solderable xx = 05, 12, 15, 24, 36 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: M = Date Code* 260C for 10 Seconds = PbFree Package Package Designed for Optimal Automated Board Assembly (Note: Microdot may be in either location) Small Package Size for High Density Applications *Date Code orientation and/or overbar may Available in 8 mm Tape and Reel vary depending upon manufacturing location. Use the Device Number to Order the 7 Inch/3,000 Unit Reel ORDERING INFORMATION Replace the T1 with T3 in the Device Number to Order the 13 Inch/10,000 Unit Reel Device Package Shipping SM05T1G SOT23 3,000/Tape & Reel (PbFree) SZSM05T1G SOT23 3,000/Tape & Reel (PbFree) SM12T1G SOT23 3,000/Tape & Reel (PbFree) SM15T1G SOT23 3,000/Tape & Reel (PbFree) SM24T1G SOT23 3,000/Tape & Reel (PbFree) SM36T1G SOT23 3,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: August, 2018 Rev. 9 SM05T1/DSM05T1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 20 s (Note 1) T 25C P 300 W L pk IEC 6100042 (ESD) kV Air 15 Contact 26 IEC 6100044 (EFT) 40 A IEC 6100045 (Lightning) 12 A Total Power Dissipation on FR5 Board (Note 2) T = 25C P 225 mW A D Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Power Dissipation on Alumina Substrate (Note 3) T = 25C P 300 mW A D Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient 417 C/W R JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 3 2. FR5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I F V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T V V V C BR RWM V I Test Current T I V R F I T V Maximum Temperature Coefficient of V BR BR I Forward Current F V Forward Voltage I F F I Z Maximum Zener Impedance I PP ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I UniDirectional ZK ZK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Typical V C V , Breakdown Voltage Capacitance BR I = Max I PP PP I (Note 4) V I V (Volts) T 1 Amp (pF) RWM R RWM Pin 1 to 3 Device Marking mA 0 Volts Device* (Volts) ( A) Min Max (Volts) (Amps) SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225 SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95 SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100 SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60 SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. 8/20 s pulse waveform per Figure 3 *Include SZ-prefix devices where applicable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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