Product Information

SZSMF24AT1G

SZSMF24AT1G electronic component of ON Semiconductor

Datasheet
TVS Diodes - Transient Voltage Suppressors SNB ZENER TVS FL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.575 ea
Line Total: USD 0.57

29537 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26627 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

SZSMF24AT1G
ON Semiconductor

1 : USD 0.575
10 : USD 0.4956
100 : USD 0.3565
500 : USD 0.2783
1000 : USD 0.2265
3000 : USD 0.1944
9000 : USD 0.1886

     
Manufacturer
Product Category
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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TVS Diodes Surface Mount > 200W > SZSMF Series RoHS Pb e3 SZSMF Series Description Uni-Directional The SZSMF series is designed to protect sensitive systems or components from high voltage, high energy transients. It offers a fast response time, low Zener impedance, high surge and excellent clamping capabilities. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and other industrial and consumer applications. Features Zener Transient Overvoltage Suppressors Standoff Voltage: 5 58 Volts Peak Power: 200 Watts 1 ms Low Leakage Agency Approvals Response Time is Typically < 1 ns AGENCY AGENCY FILE NUMBER ESD Rating of Class 3 (> 16 kV) per Human Body Model E128662 ESD Rating of Level 4 (8 kV Contact Discharge) per IEC 61000-4-2 EFT (Electrical Fast Transients) Rating of 40 A Maximum Ratings and Thermal Characteristics per IEC 61000-4-4 Rating Symbol Value Unit Low Profile: Maximum Height of 1.0 mm Maximum Ppk Dissipation (PW10/1000 s) P 200 W Small Footprint: Footprint Area of 8.45 mm2 PK (Note 1) Supplied in 8 mm Tape and Reel 3,000 Units per Reel Maximum P Dissipation T = 25C, PK A P 1000 W PK (PW8/20 s) (Note 2) Cathode Indicated by Polarity Band DC Power Dissipation T = 25C P A D mW 385 Lead Orientation in Tape: Cathode Lead to Sprocket Holes (Note 3) Derate Above 25C 4.0 mW/C These components are PbFree and are RoHS Compliant R Thermal Resistance from Junctionto JA 325 C/W Ambient (Note 3) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Thermal Resistance, Junction-to-Lead (Note3) R 26 C/W JL AECQ101 Qualified and PPAP Capable 55 to Operating and Storage Temperature Range T T C J, stg +150 Functional Diagram Bi-directional Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability. Cathode Anode 1. Nonrepetitive current pulse at T = 25C, per waveform of Figure 2. A Uni-directional 2. Nonrepetitive current pulse at T = 25C, per waveform of Figure 3. A 3. Mounted with recommended minimum pad size, DC board FR4. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/20/19TVS Diodes Surface Mount > 200W > SZSMF Series Electrical Characteristics (T = 30C unless otherwise noted, V = 1.25 Volts 200 mA) L F V V I (V) (Note 6) I I V V (Max) I (Max) (A) RWM BR T T R RWM C PP Device Device Marking V Min Nom Max mA (A) (V) (Note 7) SZSMF5.0AT1G KE 5 6.40 6.70 7.00 10 400 9.2 21.7 SZSMF6.0AT1G KG 6 6.67 7.02 7.37 10 400 10.3 19.4 SZSMF6.5AT1G KK 6.5 7.22 7.60 7.98 10 250 11.2 17.9 SZSMF7.0AT1G KM 7 7.78 8.19 8.60 10 100 12 16.7 SZSMF7.5AT1G KP 7.5 8.33 8.77 9.21 1 50 12.9 15.5 SZSMF8.0AT1G KR 8 8.89 9.36 9.83 1 25 13.6 14.7 SZSMF9.0AT1G KV 9 10.00 10.55 11.10 1 5 15.4 13.0 SZSMF10AT1G KX 10 11.10 11.70 12.30 1 2.5 17 11.8 SZSMF11AT1G KZ 11 12.20 12.85 13.50 1 2.5 18.2 11.0 SZSMF12AT1G LE 12 13.30 14.00 14.70 1 2.5 19.9 10.1 SZSMF13AT1G LG 13 14.40 15.15 15.90 1 1 21.5 9.3 SZSMF14AT1G LK 14 15.60 16.40 17.20 1 1 23.2 8.6 SZSMF15AT1G LM 15 16.70 17.60 18.50 1 1 24.4 8.2 SZSMF18AT1G LT 18 20.00 21.00 22.10 1 1 29.2 6.8 SZSMF20AT1G LV 20 22.20 23.35 24.50 1 1 32.4 6.2 SZSMF22AT1G LX 22 24.40 25.60 26.90 1 1 35.5 5.6 SZSMF24AT1G LZ 24 26.70 28.10 29.50 1 1 38.9 5.1 SZSMF26AT1G ME 26 28.90 30.40 31.90 1 1 42.1 4.8 SZSMF28AT1G MG 28 31.10 32.80 34.40 1 1 45.4 4.4 SZSMF30AT1G MK 30 33.30 35.10 36.80 1 1 48.4 4.1 SZSMF33AT1G MM 33 36.70 38.70 40.60 1 1 53.3 3.8 SZSMF36AT1G MP 36 40.00 42.10 44.20 1 1 58.1 3.4 SZSMF48AT1G MX 48 53.30 56.10 58.90 1 1 77.4 2.6 SZSMF58AT1G NG 58 64.40 67.80 71.20 1 1 93.6 2.1 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V ) which should be equal to or greater than the DC or continuous peak operating voltage level. RWM 6. V measured at pulse test current I at ambient temperature of 25C. BR T 7. Surge current waveform per Figure 2 and derate per Figure 3. I-V Curve Characteristics (T = 25C unless otherwise noted, V = 3.5 V Max. I (Note 4) = 12 A) A F F Symbol Parameter I I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I F F 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/20/19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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