Product Information

TIP105

TIP105 electronic component of ON Semiconductor

Datasheet
Darlington Transistors PNP Epitaxial Sil Darl

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2759 ea
Line Total: USD 0.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 80
Multiples : 1

Stock Image

TIP105
ON Semiconductor

80 : USD 0.837
1000 : USD 0.7159

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TIP105
ON Semiconductor

1 : USD 0.2759
10 : USD 0.2382
25 : USD 0.193
50 : USD 0.1891
100 : USD 0.1891
500 : USD 0.1891

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TIP105
ON Semiconductor

1 : USD 1.0174
10 : USD 0.8948
100 : USD 0.6858
500 : USD 0.5421
1000 : USD 0.4336

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 50
Multiples : 50

Stock Image

TIP105
ON Semiconductor

50 : USD 0.4459
250 : USD 0.3768
500 : USD 0.3705
1000 : USD 0.3643
2000 : USD 0.358

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE h CLASSIFICATION FE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 AUDIO POWER AMPLIFIER 1 GENERAL POWER SWITCHING DC-AC CONVERTER TO-220 EASY DRIVER FOR LOW VOLTAGE DC MOTOR DESCRIPTION The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for INTERNAL SCHEMATIC DIAGRAM use in power linear and switching applications. The preferred complementary NPN type is the TIP102. R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) -60 V CBO E V Collector-Emitter Voltage (I = 0) -60 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V I Collector Current -8 A C I Collector Peak Current -15 A CM I Base Current -1 A B o P Total Dissipation at T 25 C 80 W tot case o 2 W T 25 C amb o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/5 April 2003 TIP105 THERMAL DATA o R Thermal Resistance Junction-case Max 1.56 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -30 V -50 A CEO CE Current (I = 0) B I Collector Cut-off V = -60 V -50 A CBO CE Current (I = 0) E I Emitter Cut-off Current V = -5 V -8 mA EBO EB (I = 0) C V * Collector-Emitter I = -30 mA -60 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = -3 A I = -6 mA -2 V CE(sat) C B Saturation Voltage I = -8 A I = -80 mA -2.5 V C B V * Base-Emitter Voltage I = -8 A V = -4 V -2.8 V BE C CE h * DC Current Gain I = -3 A V = -4 V 2000 18000 FE C CE I = -8 A V = -4 V 200 C CE I = -3 A V = -4 V C CE Group R 2000 5000 Group O 4000 9000 Group Y 8000 18000 V * Forward Voltage of I = - I = 10 A -2.8 V F F C Commutation Diode (I = 0) B The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. Safe Operating Area DC Current Gain 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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