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This literature is subject to all applicable copyright laws and is not for resale in any manner.TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Equivalent Circuit C Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors B Complementary to TIP115 / TIP116 / TIP117 High DC Current Gain: h = 1000 V = 4 V, I = 1 A (Minimum) TO-220 FE CE C 1 Low Collector-Emitter Saturation Voltage R1 R2 1.Base 2.Collector 3.Emitter Industrial Use E Ordering Information Part Number Top Mark Package Packing Method TIP110 TIP110 TO-220 3L (Single Gauge) Bulk TIP110TU TIP110 TO-220 3L (Single Gauge) Rail TIP111TU TIP111 TO-220 3L (Single Gauge) Rail TIP112 TIP112 TO-220 3L (Single Gauge) Bulk TIP112TU TIP112 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP110 60 V Collector-Base Voltage TIP111 80 V CBO TIP112 100 TIP110 60 V Collector-Emitter Voltage TIP111 80 V CEO TIP112 100 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 2 A C I Collector Current (Pulse) 4 A CP I Base Current (DC) 50 mA B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP110 / TIP111 / TIP112 Rev. 1.1.0