Product Information

TL431AIPG

TL431AIPG electronic component of ON Semiconductor

Datasheet
Voltage References 2.5-36V ADJ 1-100mA

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 0.2457 ea
Line Total: USD 0.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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TL431AIPG
ON Semiconductor

1 : USD 0.2457
5 : USD 0.2398
50 : USD 0.2176
250 : USD 0.1778
1000 : USD 0.1591
2500 : USD 0.1545

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Reference Type
Output Voltage
Initial Accuracy
Average Temperature Coefficient - Typ
Series VREF - Input Voltage - Max
Shunt Current - Max
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Packaging
Mounting Style
Brand
Shunt Current - Min
Factory Pack Quantity :
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TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three terminal programmable shunt regulator diodes. These monolithic IC voltage TL431, A, B Series, NCV431A, B Symbol Representative Schematic Diagram Component values are nominal Cathode (K) Cathode (K) Reference (R) 800 800 Reference Anode (R) 20 pF (A) Representative Block Diagram 150 3.28 k 4.0 k 20 pF Reference Cathode 10 k 2.4 k 7.2 k (R) (K) + - 1.0 k 2.5 V ref 800 Anode (A) Anode (A) This device contains 12 active transistors. MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.) Rating Symbol Value Unit Cathode to Anode Voltage V 37 V KA Cathode Current Range, Continuous I 100 to +150 mA K Reference Input Current Range, Continuous I 0.05 to +10 mA ref Operating Junction Temperature T 150 C J Operating Ambient Temperature Range T C A TL431I, TL431AI, TL431BI 40 to +85 TL431C, TL431AC, TL431BC 0 to +70 NCV431AI, NCV431B, TL431BV 40 to +125 Storage Temperature Range T 65 to +150 C stg Total Power Dissipation T = 25C P W A D Derate above 25C Ambient Temperature D, LP Suffix Plastic Package 0.70 P Suffix Plastic Package 1.10 DM Suffix Plastic Package 0.52 Total Power Dissipation T = 25C P W C D Derate above 25C Case Temperature D, LP Suffix Plastic Package 1.5 P Suffix Plastic Package 3.0 ESD Rating HBM >2000 V MM >200 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Condition Symbol Min Max Unit Cathode to Anode Voltage V V 36 V KA ref Cathode Current I 1.0 100 mA K THERMAL CHARACTERISTICS D, LP Suffix P Suffix DM Suffix Package Package Package Characteristic Symbol Unit Thermal Resistance, JunctiontoAmbient R 178 114 240 C/W JA Thermal Resistance, JunctiontoCase R 83 41 C/W JC

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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