TVS5501V10MUT5G ON Semiconductor

TVS5501V10MUT5G electronic component of ON Semiconductor
TVS5501V10MUT5G ON Semiconductor
TVS5501V10MUT5G ESD Protection Diodes / TVS Diodes
TVS5501V10MUT5G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TVS5501V10MUT5G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TVS5501V10MUT5G ESD Protection Diodes / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. TVS5501V10MUT5G
Manufacturer: ON Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 10V TVS IN UDFN2
Datasheet: TVS5501V10MUT5G Datasheet (PDF)
Price (USD)
1: USD 0.9765 ea
Line Total: USD 0.98 
Availability : 6716
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 0.9765
10$ 0.6051
100$ 0.3647
500$ 0.2749
1000$ 0.2506
2500$ 0.2218
5000$ 0.2137
8000$ 0.1986
24000$ 0.1975

Availability 6716
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9765
10$ 0.6051
100$ 0.3647
500$ 0.2749
1000$ 0.2506
2500$ 0.2218
5000$ 0.2137
8000$ 0.1986
24000$ 0.1975

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TVS5501V10MUT5G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TVS5501V10MUT5G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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TVS5501V10 Transient Voltage Suppressors Features Protection for the following IEC Standards: www.onsemi.com IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 60 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Cathode Anode MAXIMUM RATINGS Rating Symbol Value Unit MARKING IEC 6100042 (ESD) Contact 30 kV DIAGRAM Air 30 Operating Junction and Storage T , T 65 to +150 C J stg UDFN2 EM Temperature Range CASE 517CZ Maximum Peak Pulse Current I 60 A PP 8/20 s T = 25C A E = Specific Device Code M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping TVS5501V10MUT5G UDFN2 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2018 Rev. 3 TVS5501V10/DTVS5501V10 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional TVS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 10 V RWM Breakdown Voltage V I = 1 mA 12 V BR T Reverse Leakage Current I V = 10 V 0.5 A R RWM Clamping Voltage (Note 1) V I = 10 A 15 V C PP Clamping Voltage (Note 1) V I = 60 A 20 V C PP Dynamic Resistance R 100 ns TLP Pulse, I/O Pin to GND 0.05 DYN Junction Capacitance C V = 0 V, f = 1 MHz 400 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 16 0 14 2 12 4 10 6 8 8 6 10 4 12 2 14 0 16 0 5 10 15 20 25 30 30 25 20 15 10 5 0 Ipk (A) Ipk (A) Figure 1. Positive TLP IV Curve Figure 2. Negative TLP IV Curve www.onsemi.com 2 Vpk (V) Vpk (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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FSC
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ON SEMICONDUCTOR (FAIRCHILD)
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ON-SEMI
onsemi / Fairchild
OOF
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