TVS8501V5MUT5G ON Semiconductor

TVS8501V5 Transient Voltage Suppressors Features Protection for the following IEC Standards: TVS8501V5 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional TVS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 1) V I = 1 mA 6.0 7.0 9.0 V BR T Reverse Leakage Current I V = 5 V 0.1 A R RWM Clamping Voltage (Note 2) V 7.5 V I = 1 A, t = 8 x 20 s C PP p Clamping Voltage (Note 2) V I = 35 A, t = 8 x 20 s 9.5 V C PP p Clamping Voltage (Note 2) V I = 70 A, t = 8 x 20 s 11.5 V C PP p Junction Capacitance C V = 0 V, f = 1 MHz 16 pF J R Dynamic Resistance R TLP Pulse 0.04 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A