DATA SHEET www.onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC88A/SOT353 NPN and PNP Silicon Surface Mount CASE 419A Transistors with Monolithic Bias STYLE 6 Resistor Network 312 R1 UMC2NT1G, R2 NSVUMC2NT1G, Q2 UMC3NT1G, R2 NSVUMC3NT1G, Q1 R1 UMC5NT1G, 45 NSVUMC5NT2G MARKING DIAGRAM The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors a series base resistor and a baseemitter resistor. These digital transistors are 54 designed to replace a single device and its external resistor bias Ux M network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1G series, two 132 complementary BRT devices are housed in the SOT353 package which is ideal for low power surface mount applications where board Ux = Device Marking space is at a premium. x = 2, 3 or 5 M = Date Code Features = PbFree Package Simplifies Circuit Design (Note: Microdot may be in either location) Reduces Board Space Reduces Component Count ORDERING INFORMATION Available in 8 mm, 7 inch/3000 Unit Tape and Reel See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T = 25C unless otherwise noted, common for A Q and Q , minus sign for Q (PNP) omitted) 1 2 1 Rating Symbol Value Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO Collector Current I 100 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our PbFree strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: January, 2022 Rev. 11 UMC2NT1/DUMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G MAXIMUM RATINGS (T = 25C unless otherwise noted, common for Q and Q , minus sign for Q (PNP) omitted) A 1 2 1 Rating Symbol Value Unit THERMAL CHARACTERISTICS Thermal Resistance Junction-to-Ambient (surface mounted) R 833 C/W JA Operating and Storage Temperature Range T , T 65 to +150 C J stg Total Package Dissipation T = 25C (Note 1) P *150 mW A D 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current I nAdc CBO (V = 50 V, I = 0) 100 CB E Collector-Emitter Cutoff Current I nAdc CEO (V = 50 V, I = 0) 500 CE B Emitter-Base Cutoff Current I mAdc EBO (V = 6.0, I = 0 mA) EB C UMC2NT1G, NSVUMC2NT1G 0.2 UMC3NT1G, NSVUMC3NT1G 0.5 UMC5NT1G/T2G, NSVUMC5NT2G 1.0 ON CHARACTERISTICS Collector-Base Breakdown Voltage V Vdc (BR)CBO (I = 10 A, I = 0) 50 C E Collector-Emitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mA, I = 0) 50 C B DC Current Gain h FE (V = 10 V, I = 5.0 mA) CE C UMC2NT1G, NSVUMC2NT1G 60 100 UMC3NT1G, NSVUMC3NT1G 35 60 UMC5NT1G/T2G, NSVUMC5NT2G 20 35 CollectorEmitter Saturation Voltage V Vdc CE(SAT) (I = 10 mA, I = 0.3 mA) 0.25 C B Output Voltage (on) V Vdc OL (V = 5.0 V, V = 2.5 V, R = 1.0 k ) 0.2 CC B L Output Voltage (off) V Vdc OH (V = 5.0 V, V = 0.5 V, R = 1.0 k ) 4.9 CC B L Input Resistor R1 k UMC2NT1G 15.4 22 28.6 UMC3NT1G 7.0 10 13 UMC5NT1G/T2G 3.3 4.7 6.1 Resistor Ratio R1/R2 UMC2NT1G 0.8 1.0 1.2 UMC3NT1G 0.8 1.0 1.2 UMC5NT1G/T2G 0.38 0.47 0.56 www.onsemi.com 2